Very low dielectric loss and giant dielectric response with excellent temperature stability of Ga 3+ and Ta 5+ co-doped rutile-TiO 2 ceramics

2017 ◽  
Vol 123 ◽  
pp. 15-23 ◽  
Author(s):  
Wattana Tuichai ◽  
Nateeporn Thongyong ◽  
Supamas Danwittayakul ◽  
Narong Chanlek ◽  
Pornjuk Srepusharawoot ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Dielectric Response ◽  
Temperature Stability ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Co Doped

Origin of low dielectric loss and giant dielectric response in (Nb+Al) co-doped strontium titanate

2018 ◽  
Vol 101 (11) ◽  
pp. 5089-5097 ◽  
Author(s):  
Zichen He ◽  
Minghe Cao ◽  
Liang Zhou ◽  
Lin Zhang ◽  
Juan Xie ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Strontium Titanate ◽  
Dielectric Response ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Co Doped

scholarly journals Colossal dielectric constant of NaNbO3 doped BaTiO3 ceramics

2016 ◽  
Vol 34 (2) ◽  
pp. 322-329 ◽  
Author(s):  
Wan Q. Cao ◽  
Ling F. Xu ◽  
Mukhlis M. Ismail ◽  
Li L. Huang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Traditional Approach ◽  
Temperature Stability ◽  
Bound State ◽  
High Energy ◽  
Low Dielectric ◽  
Giant Dielectric ◽  
Giant Dielectric Constant ◽  
High Dielectric

AbstractBaTiO3 ceramics doped with 0.40 mol% NaNbO3 were prepared using a traditional approach by sintering at temperature of 1250 °C to 1290 °C. The prepared ceramics was characterized by very good dielectric properties, such as high dielectric constant (1.5 × 105), low dielectric loss (0.1), and good dielectric temperature stability in the −40 °C to 100 °C range for the sample sintered below 1270 °C. The dielectric characteristics obtained with XPS confirmed that Ti4+ ions remain in the state without any change. The huge increase in dielectric constant in NaNbO3 doped BaTiO3 samples occurs when large amount of Ba2+ ions are excited to a high energy bound state of Ba2+ − e or Ba+ to create electron hopping conduction. For samples with the content of NaNbO3 higher than 0.40 mol%, or sintering temperature higher than 1280 °C, compensation effect is dominated by cation vacancies with sharply decreasing dielectric constant and increased dielectric loss. The polaron effect is used to explain the relevant mechanism of giant dielectric constant appearing in the ferroelectric phase.

Giant dielectric response and low dielectric loss in Al2O3 grafted CaCu3Ti4O12 ceramics

2015 ◽  
Vol 117 (9) ◽  
pp. 094103 ◽  
Author(s):  
A. Rajabtabar-Darvishi ◽  
R. Bayati ◽  
O. Sheikhnejad-Bishe ◽  
L. D. Wang ◽  
W. L. Li ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Dielectric Response ◽  
Low Dielectric ◽  
Giant Dielectric

High dielectric constant and low dielectric loss of Y/Mn co-doped BST@ZrO2/PVDF composite films for wearable capacitor applications

2020 ◽  
pp. 2151004
Author(s):  
Jingru Zhang ◽  
Ruoxin Xu ◽  
Xiao Han ◽  
Zhiang Zhang ◽  
Lili Zhao ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Polyvinylidene Fluoride ◽  
High Dielectric Constant ◽  
Composite Films ◽  
Temperature Stability ◽  
Co Doping ◽  
Low Dielectric ◽  
High Dielectric ◽  
Co Doped

In order to develop infinite capacitive materials with high dielectric constant and low dielectric loss, influences of Y/Mn co-doping and ZrO2 coating on the dielectric properties of barium strontium tinanate/polyvinylidene fluoride (BST/PVDF) composite films were systematically investigated with fixing Y concentration as 0.3 at.% and varying Mn concentration from 1 at.% to 4 at.%. The experimental results show that the dielectric constant of BST@ZrO2/PVDF composite increases by 50% relative to BST/PVDF and the dielectric loss is evidently depressed. In comparison with BST@ZrO2/PVDF sample, furthermore, the dielectric constant of Y/Mn co-doped BST@ZrO2/PVDF samples increases by about 60% and the dielectric loss further reduces at 1 kHz. The promoted dielectric performances of composite originate from the space charge separation formed by Y/Mn co-doping and the limitation of electronic mobility by coated ZrO2. Y/Mn co-doped BST@ZrO2/PVDF composite film with 3% Mn has a dielectric constant of 37.9, a dielectric loss of 0.0117, superior dielectric temperature stability (3.1% from -5[Formula: see text]C to 45[Formula: see text]C at 1 kHz), and a discharged energy density of 5.67 J/cm3 at 600 kV/cm. The simultaneous optimization of dielectric constant and dielectric loss of BST/PVDF composite is realized in this experiment. The superior dielectric temperature stability suggests the application potential of Y/Mn co-doped BST@ZrO2/PVDF as wearable capacitors.

PREPARATION AND CHARACTERIZATION OF MECHANICALLY FLEXIBLE RUBBER-CERAMIC COMPOSITE DIELECTRICS

2013 ◽  
Vol 22 ◽  
pp. 148-152
Author(s):  
DHANESH THOMAS ◽  
M. T. SEBASTIAN
Keyword(s):  
Dielectric Loss ◽  
Hot Pressing ◽  
Relative Permittivity ◽  
Ceramic Composite ◽  
Temperature Stability ◽  
Theoretical Models ◽  
Butyl Rubber ◽  
Low Dielectric

Butyl rubber — Ca 4 La 6( SiO 4)4( PO 4)2 O 2 — composites have been prepared by sigma mixing and hot pressing. The relative permittivity of the composites varies from 3 to 5.3 at 1 MHz. All the composites show low dielectric loss of the order of 10−3 at 1 MHz. The experimentally observed values of relative permittivity are correlated with those calculated using various theoretical models. The composites show good temperature stability of relative permittivity.

Surface barrier layer effect in (In + Nb) co-doped TiO2 ceramics: An alternative route to design low dielectric loss

2017 ◽  
Vol 100 (4) ◽  
pp. 1452-1459 ◽  
Author(s):  
Theeranuch Nachaithong ◽  
Pinit Kidkhunthod ◽  
Prasit Thongbai ◽  
Santi Maensiri
Keyword(s):  
Dielectric Loss ◽  
Barrier Layer ◽  
Surface Barrier ◽  
Alternative Route ◽  
Doped Tio2 ◽  
Low Dielectric ◽  
Layer Effect ◽  
Co Doped

Giant dielectric response and charge compensation of Li- and Co-doped NiO ceramics

2012 ◽  
Vol 177 (9) ◽  
pp. 673-677 ◽  
Author(s):  
Yunhua Li ◽  
Liang Fang ◽  
Laijun Liu ◽  
Yanming Huang ◽  
Changzheng Hu
Keyword(s):  
Dielectric Response ◽  
Charge Compensation ◽  
Giant Dielectric ◽  
Co Doped

scholarly journals High-performance colossal permittivity materials of (Nb + Er) co-doped TiO2 for large capacitors and high-energy-density storage devices

2016 ◽  
Vol 18 (35) ◽  
pp. 24270-24277 ◽  
Author(s):  
Mei-Yan Tse ◽  
Xianhua Wei ◽  
Jianhua Hao
Keyword(s):  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Performance ◽  
High Energy ◽  
High Energy Density ◽  
Secondary Phases ◽  
Storage Devices ◽  
Low Dielectric ◽  
Colossal Permittivity ◽  
Co Doped

Our work shows contributions to the high-performance dielectric properties, including a CP of up to 104–105 and a low dielectric loss down to 0.03 in (Er0.5Nb0.5)xTi1−xO2 materials with secondary phases.

Temperature stability and low dielectric loss of lithium-doped CdCu3Ti4O12 ceramics for X9R capacitor applications

2019 ◽  
Vol 45 (17) ◽  
pp. 22991-22997 ◽  
Author(s):  
Nan Zhao ◽  
Pengfei Liang ◽  
Di Wu ◽  
Xiaolian Chao ◽  
Zupei Yang
Keyword(s):  
Dielectric Loss ◽  
Temperature Stability ◽  
Low Dielectric
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