Nanocomposites of Teflon AF containing 3D homogeneously distributed Ag and Fe59.42Ni29.28Co11.30 isolated clusters by elevated temperature vapor phase co-deposition

Author(s):  
A Biswas
2018 ◽  
Vol 282 ◽  
pp. 31-36
Author(s):  
Rita Vos ◽  
Tim Steylaerts ◽  
Alexis Franquet ◽  
Alain Moussa ◽  
Tim Stakenborg ◽  
...  

The vapor-phase deposition of 11-azidoundecyltrimethoxysilanes at reduced pressure and elevated temperature allows the introduction of azido (N3) functionalized silicon wafer substrates. This process can be optimized by controlling the amount of surface adsorbed water and results in uniform and reproducible self-assembled monolayers (SAMs). The N3-SAM density as investigated via TOF-SIMS is comparable on thermal oxide and Si3N4substrates. Furthermore, it is demonstrated that biomolecules can be successfully conjugated on both substrates using azide-alkyne ‘click’ reactions.


2011 ◽  
Vol 36 (11) ◽  
pp. 6472-6477 ◽  
Author(s):  
Hong Liu ◽  
Christopher M. Boyd ◽  
Amy M. Beaird ◽  
Michael A. Matthews

2013 ◽  
Vol 802 ◽  
pp. 40-45 ◽  
Author(s):  
Manuel Azenha ◽  
Eric Schillinger ◽  
Esther Sanmartin ◽  
M. Teresa Regueiras ◽  
Fernando Silva ◽  
...  

Nano Letters ◽  
2003 ◽  
Vol 3 (1) ◽  
pp. 69-73 ◽  
Author(s):  
A. Biswas ◽  
Z. Marton ◽  
J. Kanzow ◽  
J. Kruse ◽  
V. Zaporojtchenko ◽  
...  

Author(s):  
G.J.C. Carpenter

In zirconium-hydrogen alloys, rapid cooling from an elevated temperature causes precipitation of the face-centred tetragonal (fct) phase, γZrH, in the form of needles, parallel to the close-packed <1120>zr directions (1). With low hydrogen concentrations, the hydride solvus is sufficiently low that zirconium atom diffusion cannot occur. For example, with 6 μg/g hydrogen, the solvus temperature is approximately 370 K (2), at which only the hydrogen diffuses readily. Shears are therefore necessary to produce the crystallographic transformation from hexagonal close-packed (hep) zirconium to fct hydride.The simplest mechanism for the transformation is the passage of Shockley partial dislocations having Burgers vectors (b) of the type 1/3<0110> on every second (0001)Zr plane. If the partial dislocations are in the form of loops with the same b, the crosssection of a hydride precipitate will be as shown in fig.1. A consequence of this type of transformation is that a cumulative shear, S, is produced that leads to a strain field in the surrounding zirconium matrix, as illustrated in fig.2a.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.


1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  

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