Non-Debye Relaxation of AgBiSe2 single crystal featuring Flip-Flop jumps in Bi valence state

2021 ◽  
pp. 130179
Author(s):  
M. William Carry ◽  
S. Vinoth Rathan ◽  
Arumugam Raja ◽  
Muthu Senthil Pandian ◽  
P. Ramasamy
Keyword(s):  
Single Crystal ◽  
Valence State ◽  
Debye Relaxation ◽  
Flip Flop

Superconductivity and valence state in layered single-crystal HfAs1.67Te0.12

2017 ◽  
Vol 31 (1) ◽  
pp. 015020
Author(s):  
Jian Peng ◽  
Jia Yu ◽  
Shuai Zhang ◽  
Genfu Chen
Keyword(s):  
Single Crystal ◽  
Valence State

scholarly journals Valence self-regulation of sulfur in nanoclusters

2019 ◽  
Vol 5 (11) ◽  
pp. eaax7863 ◽  
Author(s):  
Xi Kang ◽  
Fengqing Xu ◽  
Xiao Wei ◽  
Shuxin Wang ◽  
Manzhou Zhu
Keyword(s):  
Mass Spectrometry ◽  
Single Crystal ◽  
Diffraction Analysis ◽  
Valence State ◽  
Self Regulation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Capping Ligands ◽  
First Time

The valence self-regulation of sulfur from the “−2” valence state in thiols to the “−1” valence state in hydroxylated thiolates has been accomplished using the Pt1Ag28 nanocluster as a platform—the first time that the “−1” valent sulfur has been detected as S−1. Two previously unknown nanoclusters, Pt1Ag28(SR)20 and Pt1Ag28(SR)18(HO-SR)2 (where SR represents 2-adamantanethiol), have been synthesized and characterized—in the latter nanocluster, the presence of hydroxyl induces the valence regulation of two special S atoms from “−2” (in SR) to “−1” valence state in the HO-S(Ag)R. Because of the contrasting nature of the capping ligands in these two nanoclusters [i.e., only SR in Pt1Ag28(SR)20 or both SR- and HO-SR- in Pt1Ag28(SR)18(HO-SR)2], they exhibit differing shell architectures, even though their cores (Pt1Ag12) are in the same icosahedral configuration. Single-crystal x-ray diffraction analysis revealed their 1:1 cocrystallization, and mass spectrometry verified the presence of hydroxyls on Pt1Ag28(SR)18(HO-SR)2.

Crystal Structure of the Ternary Arsenide CeNi1.91As1.94

2002 ◽  
Vol 57 (12) ◽  
pp. 1359-1366 ◽  
Author(s):  
V. Babizhetskyy ◽  
E. Le Für ◽  
J. Y. Pivan ◽  
R. Guérin
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Structure Determination ◽  
Valence State ◽  
Single Crystal Structure ◽  
Crystal Structure Determination ◽  
X Ray ◽  
Structural Modifications ◽  
Atomic Displacements

A new ternary intermetallic has been obtained in the Ce-Ni-As system, the composition of which is CeNi1.91As1.94 from X-ray single crystal structure determination. The structure is derived from the CaBe2Ge2 type with the following relations between the vectors a, b, and c of the cell and a0, b0, and c0 of the subcell: a = 2a0 - 2b0; b = 2a0 + 2b0 and c = 2c0 (V = 16 V0). The structure takes its origin from compositional and displacive mechanisms. The major structural modifications occur in the nickel-arsenic layers (two per cell) where the nickel atoms are in “square” pyramidal As sites. Moreover, the slight atomic displacements in these layers that develop in the ab plane, lead to As8 clusters, each formed by a central part As4 linked by four apical As ligands. These clusters constrain arsenic to adopt a valence state higher than -3 which in turn involves the lowering of the counterbalancing charge from the nickel substructure. The structure of CeNi1.91As1.94 is compared in details with that of the previously reported URh1.6As1.9.

Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3

2012 ◽  
Vol 111 (12) ◽  
pp. 123716 ◽  
Author(s):  
T. C. Lovejoy ◽  
Renyu Chen ◽  
E. N. Yitamben ◽  
V. Shutthanadan ◽  
S. M. Heald ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Single Crystal ◽  
Valence State ◽  
Bulk Single Crystal

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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