A Novel Experimental Setup for in situ Oxidation Behavior Study of Nb/Hf/Ti (C-103) Alloy for High Temperature Environments

2021 ◽  
pp. 130336
Author(s):  
S. Kathiravan ◽  
Gobi Saravanan Kaliaraj ◽  
Ravi Ranjan Kumar ◽  
A.M. Kamalan Kirubaharan
Keyword(s):  
High Temperature ◽  
Oxidation Behavior ◽  
Experimental Setup ◽  
In Situ Oxidation ◽  
Behavior Study

scholarly journals Investigation of the α−γ−α Phase Transformation in Steel: High-Temperature In Situ EBSD Measurements

2008 ◽  
Vol 2008 ◽  
pp. 1-7 ◽  
Author(s):  
I. Lischewski ◽  
D. M. Kirch ◽  
A. Ziemons ◽  
G. Gottstein
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Electron Backscatter Diffraction ◽  
Experimental Setup ◽  
Ebsd Data ◽  
Α Phase ◽  
Electron Backscatter ◽  
First Results ◽  
Backscatter Diffraction

A newly developed laser powered heating stage for commercial SEMs in combination with automated established electron backscatter diffraction (EBSD) data acquisition is presented. This novel experimental setup can be used to achieve more information about microstructure and orientation changes during grain growth, recrystallization, recovery, and phase transformations. First results on the α−γ−α phase transformation in steel within 886∘C–900∘C are presented.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

OXIDATION BEHAVIOR OF IN SITU SYNTHESIZED MoSi2-SiC COMPOSITES AT 500℃

2013 ◽  
Vol 49 (11) ◽  
pp. 1303 ◽  
Author(s):  
Laiqi ZHANG ◽  
Kunming PAN ◽  
Lihui DUAN ◽  
Junpin LIN
Keyword(s):  
Oxidation Behavior ◽  
Sic Composites
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