Swift Heavy Ion (SHI) Irradiation Effects on Pure and Ce Doped Sr0.6Ba0.4Nb2O6 Thin Films

2016 ◽  
Vol 3 (10) ◽  
pp. 3982-3986 ◽  
Author(s):  
G.Ramesh Kumar ◽  
S. Gokulraj ◽  
S. Yathavan
RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.


2010 ◽  
Vol 160-162 ◽  
pp. 1012-1015
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Kong Fang Wei ◽  
Tie Long Shen ◽  
...  

Polycrystalline magnetite (Fe3O4) thin films is synthesized at low temperature (90 oC) by electroless plating in aqueous solution, and the behavior of the magnetic property of the Fe3O4 thin film irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The initial crystallographic structure of the Fe3O4 remains unaffected after swift heavy ion (SHI) irradiation, but both coercive force and saturation magnetization are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. And SHI irradiation could make the magnetic moments of the Fe3O4 films ordered around the columnar defects and the magnetic moments tend to arrange along the films plane. All modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.


2011 ◽  
Vol 213 ◽  
pp. 325-329 ◽  
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Cun Feng Yao ◽  
Kong Fang Wei ◽  
...  

MnZn ferrite thin films are deposited by alternative sputtering technique from two targets with the composition of MnFe2O4 and ZnFe2O4, and the behavior of the magnetic properties of the MnZn ferrite thin films irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The fabricating and modifying conditions on the performance of the films are studied to improve Ms and reduce Hc of the films, making the films suitable to the applications of high-frequency film devices. For Mn1-xZnxFe2O4 thin films, the Ms increases firstly then decreases and Hc decreases monotonously with increasing Zn content. And both Ms and Hc are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. The modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.


Author(s):  
José Cardoso ◽  
Nabiha Ben Sedrine ◽  
Przemysław Jóźwik ◽  
Miguel C. Sequeira ◽  
Christian M. Wetzel ◽  
...  

Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.


2006 ◽  
Vol 88 (15) ◽  
pp. 152503 ◽  
Author(s):  
J. H. Markna ◽  
R. N. Parmar ◽  
D. G. Kuberkar ◽  
Ravi Kumar ◽  
D. S. Rana ◽  
...  

2021 ◽  
Vol 129 (3) ◽  
pp. 035108
Author(s):  
Harsh Gupta ◽  
Ravi K. Bommali ◽  
Santanu Ghosh ◽  
Himanshu Srivastava ◽  
Arvind Srivastava ◽  
...  

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