Overlay as the key to drive wafer scale 3D integration

2007 ◽  
Vol 84 (5-8) ◽  
pp. 1412-1415 ◽  
Author(s):  
Steven E. Steen ◽  
Douglas LaTulipe ◽  
Anna W. Topol ◽  
David J. Frank ◽  
Kevin Belote ◽  
...  
Keyword(s):  
2011 ◽  
Vol 88 (1) ◽  
pp. 131-134 ◽  
Author(s):  
C.L. Chen ◽  
D.-R. Yost ◽  
J.M. Knecht ◽  
J. Wey ◽  
D.C. Chapman ◽  
...  

2004 ◽  
Vol 833 ◽  
Author(s):  
Sang Kevin Kim ◽  
Lei Xue ◽  
Sandip Tiwari

ABSTRACTA successful wafer-scale device layering process for fabricating three-dimensional integrated circuits (3D ICs) using Benzocyclobutene (BCB) is described. In the reported embodiment of the method, a sub-micron thick “donor” device layer is transplanted onto a fully fabricated “host” wafer with BCB as the intervening medium. Experimental results, including RIE study and planarization of BCB processed through the 3D fabrication procedure are reported. We conclude with an approach to alleviate BCB and fabrication induced wafer bowing, which leads to poor wafer to wafer alignment in 3D integration.


2019 ◽  
Vol 54 (11) ◽  
pp. 3061-3074 ◽  
Author(s):  
Taehwan Kim ◽  
Tat Ngai ◽  
Yukta Timalsina ◽  
Michael R. Watts ◽  
Vladimir Stojanovic ◽  
...  

2010 ◽  
Author(s):  
Bo-Kuai Lai ◽  
Alex C. Johnson ◽  
Masaru Tsuchiya ◽  
Shriram Ramanathan

1988 ◽  
Vol 135 (6) ◽  
pp. 281
Author(s):  
J.B. Butcher ◽  
K.K. Johnstone

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