Wafer-scale 3D integration of InGaAs photodiode arrays with Si readout circuits by oxide bonding and through-oxide vias

ABSTRACTA successful wafer-scale device layering process for fabricating three-dimensional integrated circuits (3D ICs) using Benzocyclobutene (BCB) is described. In the reported embodiment of the method, a sub-micron thick “donor” device layer is transplanted onto a fully fabricated “host” wafer with BCB as the intervening medium. Experimental results, including RIE study and planarization of BCB processed through the 3D fabrication procedure are reported. We conclude with an approach to alleviate BCB and fabrication induced wafer bowing, which leads to poor wafer to wafer alignment in 3D integration.

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A Single-Chip Optical Phased Array in a Wafer-Scale Silicon Photonics/CMOS 3D-Integration Platform

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2019.2934601 ◽

2019 ◽

Vol 54 (11) ◽

pp. 3061-3074 ◽

Cited By ~ 8

Author(s):

Taehwan Kim ◽

Tat Ngai ◽

Yukta Timalsina ◽

Michael R. Watts ◽

Vladimir Stojanovic ◽

...

Keyword(s):

Silicon Photonics ◽

Phased Array ◽

Single Chip ◽

3D Integration ◽

Integration Platform ◽

Wafer Scale ◽

Optical Phased Array

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Wafer-Scale 3D Integration of Silicon-on-Insulator RF Amplifiers

2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ◽

10.1109/smic.2009.4770536 ◽

2009 ◽

Cited By ~ 5

Author(s):

C. L. Chen ◽

C. K. Chen ◽

D.-R. Yost ◽

J. M. Knecht ◽

P. W. Wyatt ◽

...

Keyword(s):

Silicon On Insulator ◽

3D Integration ◽

Rf Amplifiers ◽

Wafer Scale

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Toward wafer-scale fabrication and 3D integration of micro-solid oxide fuel cells for portable energy

10.1117/12.846916 ◽

2010 ◽

Author(s):

Bo-Kuai Lai ◽

Alex C. Johnson ◽

Masaru Tsuchiya ◽

Shriram Ramanathan

Keyword(s):

Fuel Cells ◽

Solid Oxide Fuel Cells ◽

Solid Oxide ◽

Oxide Fuel ◽

3D Integration ◽

Wafer Scale

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Parallel Detection of Electron Energy Loss Spectra in Direct Mode

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134004 ◽

1990 ◽

Vol 48 (2) ◽

pp. 82-83

Author(s):

Eckhard Quandt ◽

Stephan laBarré ◽

Andreas Hartmann ◽

Heinz Niedrig

Keyword(s):

Energy Loss ◽

Electron Energy ◽

Energy Resolution ◽

Large Angle ◽

Maximum Energy ◽

Semiconductor Detectors ◽

Parallel Detection ◽

Photodiode Arrays ◽

Electron Energy Loss ◽

Electron Energy Loss Spectra

Due to the development of semiconductor detectors with high spatial resolution -- e.g. charge coupled devices (CCDs) or photodiode arrays (PDAs) -- the parallel detection of electron energy loss spectra (EELS) has become an important alternative to serial registration. Using parallel detection for recording of energy spectroscopic large angle convergent beam patterns (LACBPs) special selected scattering vectors and small detection apertures lead to very low intensities. Therefore the very sensitive direct irradiation of a cooled linear PDA instead of the common combination of scintillator, fibre optic, and semiconductor has been investigated. In order to obtain a sufficient energy resolution the spectra are optionally magnified by a quadrupole-lens system.The detector used is a Hamamatsu S2304-512Q linear PDA with 512 diodes and removed quartz-glas window. The sensor size is 13 μm ∗ 2.5 mm with an element spacing of 25 μm. Along with the dispersion of 3.5 μm/eV at 40 keV the maximum energy resolution is limited to about 7 eV, so that a magnification system should be attached for experiments requiring a better resolution.

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