Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors

2022 ◽  
Vol 253 ◽  
pp. 111678
Author(s):  
Balaji Murugan ◽  
Sang Yeol Lee
Keyword(s):  
Oxygen Vacancy ◽  
Temperature Dependence ◽  
Positive Bias ◽  
Bias Stress

P-25: Enhancement in Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors with Vertically Graded-Oxygen-Vacancy Active Layer

2015 ◽  
Vol 46 (1) ◽  
pp. 1209-1212
Author(s):  
Yeong-gyu Kim ◽  
Seokhyun Yoon ◽  
Seonghwan Hong ◽  
Jong Sun Choi ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics

2019 ◽  
Vol 40 (2) ◽  
pp. 232-235 ◽  
Author(s):  
Guanhua Yang ◽  
Xichen Chuai ◽  
Jiebin Niu ◽  
Jiawei Wang ◽  
Xuewen Shi ◽  
...  
Keyword(s):  
Hydrogen Concentration ◽  
Gate Dielectrics ◽  
Positive Bias ◽  
High Hydrogen ◽  
Bias Stress

P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

2014 ◽  
Vol 35 (5) ◽  
pp. 560-562 ◽  
Author(s):  
Seonghyun Jin ◽  
Tae-Woong Kim ◽  
Young-Gug Seol ◽  
Mallory Mativenga ◽  
Jin Jang
Keyword(s):  
Positive Bias ◽  
Stress Effects ◽  
Bias Stress ◽  
Amorphous Ingazno

Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

2008 ◽  
Vol 145 (5-6) ◽  
pp. 321-326 ◽  
Author(s):  
Peter Klason ◽  
Thomas Moe Børseth ◽  
Qing X. Zhao ◽  
Bengt G. Svensson ◽  
Andrej Yu. Kuznetsov ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxygen Vacancy ◽  
Temperature Dependence ◽  
Decay Times

COMPARATIVE INSTABILITIES ANALYSIS FOR a-Si:H BODY-TIED TFT (BT-TFT) AND FLOATING BODY TFT (FB-TFT) UNDER BIAS TEMPERATURE STRESSING (BTS)

2008 ◽  
Vol 22 (05) ◽  
pp. 337-341
Author(s):  
YONG K. LEE ◽  
SUNG-HOON CHOA
Keyword(s):  
Silicon Nitride ◽  
Threshold Voltage ◽  
Gate Insulator ◽  
Floating Body ◽  
Negative Bias ◽  
Positive Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Hole Trapping

The a- Si:H thin film transistors TFT with silicon nitride as a gate insulator have been stressed with negative and positive bias to realize the instability mechanisms. With proposed BT-TFT and FB-TFT devices, it is found that the threshold voltages of both BT-TFT and BT-TFT devices are positively shifted under positive bias stress and then negatively shifted for negative bias stress. The positive threshold voltage shift is due to the electron trapping in the silicon nitride or at the a- Si:H /silicon nitride interface. The negative threshold voltage shift is mainly due to hole trapping and/or electron de-trapping in the silicon nitride or at the a- Si:H /silicon nitride interface. The positive or negative threshold voltage shift keeps increasing with increasing positive or negative gate bias for both BT-TFT and FB-TFT devices. However, as far as the threshold voltage shift slope is concerned, under positive bias stress, both BT-TFT and FB-TFT devices are similar to each other. On the other hand, under negative bias stress, BT-TFT shift amount is much less than one for the FB-TFT device.

Sign in / Sign up

Export Citation Format

Share Document