Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation

2014 ◽  
Vol 45 (11) ◽  
pp. 1508-1514 ◽  
Author(s):  
Manoj Kumar ◽  
Subhasis Haldar ◽  
Mridula Gupta ◽  
R.S. Gupta
Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4049
Author(s):  
Thomas Ameloot ◽  
Marc Moeneclaey ◽  
Patrick Van Van Torre ◽  
Hendrik Rogier

Long-range, low-power wireless technologies such as LoRa have been shown to exhibit excellent performance when applied in body-centric wireless applications. However, the robustness of LoRa technology to Doppler spread has recently been called into question by a number of researchers. This paper evaluates the impact of static and dynamic Doppler shifts on a simulated LoRa symbol detector and two types of simulated LoRa receivers. The results are interpreted specifically for body-centric applications and confirm that, in most application environments, pure Doppler effects are unlikely to severely disrupt wireless communication, confirming previous research, which stated that the link deteriorations observed in a number of practical LoRa measurement campaigns would mainly be caused by multipath fading effects. Yet, dynamic Doppler shifts, which occur as a result of the relative acceleration between communicating nodes, are also shown to contribute to link degradation. This is especially so for higher LoRa spreading factors and larger packet sizes.


2017 ◽  
Vol 65 (12) ◽  
pp. 5251-5262 ◽  
Author(s):  
Spyridon Nektarios Daskalakis ◽  
John Kimionis ◽  
Ana Collado ◽  
George Goussetis ◽  
Manos M. Tentzeris ◽  
...  

Author(s):  
Nuraiza Ismail ◽  
Mohd Tarmizi Ali ◽  
Ermeey Abd Kadir ◽  
Mazratul Firdaus Mohd Zin ◽  
Fatimah Nur Mohd Redzwan

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