Capacitance-to-voltage converter employing parallel-series passive charge integrator for low noise power efficient MEMS capacitive sensor

2022 ◽  
pp. 105369
Author(s):  
Longjie Zhong ◽  
Pengpeng Shang ◽  
Wenfei Cao ◽  
Zhangming Zhu ◽  
Shubin Liu
1995 ◽  
Vol 31 (16) ◽  
pp. 1338-1339 ◽  
Author(s):  
J.L. González ◽  
A. Rubio
Keyword(s):  

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.


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