scholarly journals Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology

2007 ◽  
Vol 47 (9-11) ◽  
pp. 1419-1423 ◽  
Author(s):  
A. Boukhenoufa ◽  
L. Pichon ◽  
C. Cordier
1992 ◽  
Vol 258 ◽  
Author(s):  
M.F. Willums ◽  
M. Hack ◽  
P.G. Lecomber ◽  
J. Shaw

ABSTRACTTransient measurements of the source-drain current ISD of amorphous silicon (a-Si:H) thin film transistors are compared with the results of two dimensional simulations. In particular, we have investigated the effect of different amorphous silicon layer thicknesses on the transient response. It is found that the dynamic response of a transistor with 0.4 μm a-Si:H is significantly slower than that of a device with only 0.06 μm of a-Si:H.


2007 ◽  
Vol 515 (19) ◽  
pp. 7556-7559 ◽  
Author(s):  
A. Boukhenoufa ◽  
C. Cordier ◽  
L. Pichon ◽  
B. Cretu

Author(s):  
Aihui Liang ◽  
Yao Gao ◽  
Reza Asadpour ◽  
Zitang Wei ◽  
Blake P. Finkenauer ◽  
...  

2020 ◽  
Vol 12 (4) ◽  
pp. 4749-4754 ◽  
Author(s):  
Hamin Park ◽  
Dong Sik Oh ◽  
Khang June Lee ◽  
Dae Yool Jung ◽  
Seunghee Lee ◽  
...  

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