A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches

2014 ◽  
Vol 54 (9-10) ◽  
pp. 2159-2163 ◽  
Author(s):  
M. Koutsoureli ◽  
L. Michalas ◽  
A. Gantis ◽  
G. Papaioannou
Keyword(s):  
Silicon Nitride ◽  
Capacitive Switches ◽  
Silicon Nitride Films ◽  
Deposition Conditions

Charging Processes in Silicon Nitride Films for RF-MEMS Capacitive Switches: The Effect of Deposition Method and Film Thickness

2008 ◽  
Author(s):  
George Papaioannou ◽  
Usama Zaghloul ◽  
Robert Plana ◽  
Fabio Coccetti ◽  
Patrick Pons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Rf Mems ◽  
Deposition Method ◽  
Capacitive Switches ◽  
Silicon Nitride Films

Gettering Effects of Silicon Nitride Films From Various Plasma-Enhanced Chemical Vapor Deposition Conditions

2019 ◽  
Vol 9 (1) ◽  
pp. 78-81 ◽  
Author(s):  
AnYao Liu ◽  
Ziv Hameiri ◽  
Yimao Wan ◽  
Chang Sun ◽  
Daniel Macdonald
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Deposition Conditions

Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
M. Losurdo
Keyword(s):  
Silicon Nitride ◽  
Gas Mixtures ◽  
Mixture Composition ◽  
Silicon Nitride Films ◽  
Glow Discharges ◽  
Deposition Conditions

ABSTRACTRadiofrequency glow discharges, operating under various conditions, have been used to deposit hydrogenated and fluorinated silicon nitride (a-Si,N:H,F) from SiF4-N2-H2 gas mixtures. The effect of the feeding mixture composition has been investigated in order to establish the optimum deposition conditions for stable silicon nitride. High H2-dilution of the feeding mixture has been found to produce transparent (Eg>5.6eV) and stoichiometric (N/Si=1.3) films.

scholarly journals Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

2006 ◽  
Vol 435-436 ◽  
pp. 453-459 ◽  
Author(s):  
H. Huang ◽  
K.J. Winchester ◽  
A. Suvorova ◽  
B.R. Lawn ◽  
Y. Liu ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Nitride Films ◽  
Deposition Conditions

Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2015-2021 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Deposition Conditions
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