Charging Processes in Silicon Nitride Films for RF-MEMS Capacitive Switches: The Effect of Deposition Method and Film Thickness

2008 ◽  
Author(s):  
George Papaioannou ◽  
Usama Zaghloul ◽  
Robert Plana ◽  
Fabio Coccetti ◽  
Patrick Pons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Rf Mems ◽  
Deposition Method ◽  
Capacitive Switches ◽  
Silicon Nitride Films

Dielectric Charging in Low Temperature Silicon Nitride for RF-MEMS Capacitive Switches

2008 ◽  
Vol 1075 ◽  
Author(s):  
Richard Daigler ◽  
George Papaioannou ◽  
Eleni Papandreou ◽  
John Papapolymerou
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Film Thickness ◽  
Rf Mems ◽  
Dielectric Film ◽  
Systematic Investigation ◽  
Space Charge Polarization ◽  
Capacitive Switches ◽  
Dielectric Charging ◽  
Polarization Mechanism

ABSTRACTThe paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The investigation takes includes both the effect of dielectric film thickness as well as the effect of metal contacts. The investigation demonstrates that the charging process is asymmetric. It is shown that the amount of stored charge depends significantly on the dielectric film thickness, which is caused from the contribution of the space charge polarization mechanism. Finally, the results are compared with those of higher temperature silicon nitride.

Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Gate Bias ◽  
Charge Generation ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

The Effect of Silicon Nitride Stoichiometry on Charging Mechanisms in RF-MEMS Capacitive Switches

2009 ◽  
Vol 57 (12) ◽  
pp. 3518-3524 ◽  
Author(s):  
N. Tavassolian ◽  
M. Koutsoureli ◽  
E. Papandreou ◽  
G. Papaioannou ◽  
B. Lacroix ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Rf Mems ◽  
Capacitive Switches
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