Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps

Journal of Applied Physics ◽

10.1063/1.4991739 ◽

2017 ◽

Vol 122 (10) ◽

pp. 105701 ◽

Cited By ~ 16

Author(s):

N. Chinone ◽

Y. Cho

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Higher Order ◽

Interface Traps ◽

Two Dimensional ◽

Nonlinear Dielectric ◽

Dimensional Distribution ◽

Transient Spectroscopy

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Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.127 ◽

2017 ◽

Vol 897 ◽

pp. 127-130

Author(s):

Norimichi Chinone ◽

Ryoji Kosugi ◽

Yasunori Tanaka ◽

Shinsuke Harada ◽

Hajime Okumura ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Higher Order ◽

Trap Density ◽

New Technique ◽

Two Dimensional ◽

Nonlinear Dielectric ◽

Transient Spectroscopy ◽

A New Technique

A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique, SiO2/SiC structure samples with different post oxidation annealing (POA) conditions were measured. We observed that the local DLTS signal decreases with POA levels, which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiO2/SiC interface.

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Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2016.7564317 ◽

2016 ◽

Cited By ~ 1

Author(s):

Norimichi Chinone ◽

Ryoji Kosugi ◽

Yasunori Tanaka ◽

Shinsuke Harada ◽

Hajime Okumura ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Higher Order ◽

Nonlinear Dielectric ◽

Transient Spectroscopy

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High Resolution Observation of Subsurface Defects at SiO2/4H-SiC Interfaces by Local Deep Level Transient Spectroscopy Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy

2019 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2019.8720482 ◽

2019 ◽

Author(s):

Yuji Yamagishi ◽

Yasuo Cho

Keyword(s):

High Resolution ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Time Resolved ◽

Nonlinear Dielectric ◽

Resolution Observation ◽

Transient Spectroscopy ◽

High Resolution Observation ◽

Subsurface Defects

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Local Capacitance-Voltage Profiling and Deep Level Transient Spectroscopy of SiO2/SiC Interfaces by Scanning Nonlinear Dielectric Microscopy

10.1109/ipfa53173.2021.9617348 ◽

2021 ◽

Author(s):

Kohei Yamasue ◽

Yasuo Cho

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Nonlinear Dielectric ◽

Capacitance Voltage ◽

Transient Spectroscopy

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Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

MRS Proceedings ◽

10.1557/proc-223-203 ◽

1991 ◽

Vol 223 ◽

Author(s):

A. Vaseashta ◽

L. C. Burton

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Thermal Recovery ◽

Low Energy ◽

Persistent Photoconductivity ◽

Transport Parameters ◽

Excellent Correlation ◽

Proposed Model ◽

Transient Spectroscopy ◽

Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

MRS Proceedings ◽

10.1557/proc-719-f8.11 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 1

Author(s):

Masashi Kato ◽

Masaya Ichimura ◽

Eisuke Arai ◽

Shigehiro Nishino

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Activation Energies ◽

Thickness Dependence ◽

Epitaxial Layers ◽

Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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