A novel submicron-gap electrode fabrication technology using thermal oxidation

2012 ◽  
Vol 32 (2) ◽  
pp. 369-374 ◽  
Author(s):  
Xuejiao Chen ◽  
Jian Zhang ◽  
Huhua Xu ◽  
Shichao Hui ◽  
Meiguang Zhu
2001 ◽  
Vol 670 ◽  
Author(s):  
Hidekazu Sato ◽  
Takae Sukegawa ◽  
Toshifumi Mori ◽  
Kousuke Suzuki ◽  
Haruhisa Mori

ABSTRACTThis paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.


1994 ◽  
Vol 33 (Part 1, No. 5B) ◽  
pp. 3018-3020 ◽  
Author(s):  
Kazuhiko Yamanouchi ◽  
Toshiyasu Meguro ◽  
Yasuo Wagatsuma ◽  
Hiroyuki Odagawa ◽  
Keiichi Yamamoto

2011 ◽  
Vol 53 (10) ◽  
pp. 634-638 ◽  
Author(s):  
Vesna Alar ◽  
Ivan Esih ◽  
Ivan Budic ◽  
Slavonski Brod

Ceramist ◽  
2018 ◽  
Vol 21 (2) ◽  
pp. 195-200
Author(s):  
Danbi Kim ◽  
◽  
Nu Si A Eom ◽  
Jiwon Kim ◽  
Jae-Hong Lim ◽  
...  

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