Effect of Source/ Drain Electrode Fabrication Technology on the Electrical Properties of Solution-processed A-IGZO Based Transistors

Author(s):  
Jinxuan Wu ◽  
Qijun Sun ◽  
Meng Zhang ◽  
Yan Yan ◽  
Juin Jei Liou
2012 ◽  
Vol 32 (2) ◽  
pp. 369-374 ◽  
Author(s):  
Xuejiao Chen ◽  
Jian Zhang ◽  
Huhua Xu ◽  
Shichao Hui ◽  
Meiguang Zhu

2001 ◽  
Vol 670 ◽  
Author(s):  
Hidekazu Sato ◽  
Takae Sukegawa ◽  
Toshifumi Mori ◽  
Kousuke Suzuki ◽  
Haruhisa Mori

ABSTRACTThis paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.


AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075104
Author(s):  
Veronika Ulianova ◽  
Yurii Didenko ◽  
Sami Bolat ◽  
Galo Torres Sevilla ◽  
Dmytro Tatarchuk ◽  
...  

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