scholarly journals Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature

2010 ◽  
Vol 23 (4) ◽  
pp. 280-286 ◽  
Author(s):  
Jae-Yong Jung ◽  
Shin-Ho Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Electrical And Optical Properties ◽  
Rapid Thermal Annealing Temperature

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

2006 ◽  
Vol 100 (11) ◽  
pp. 113515 ◽  
Author(s):  
Jong Hoon Kim ◽  
Byung Du Ahn ◽  
Choong Hee Lee ◽  
Kyung Ah Jeon ◽  
Hong Seong Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

Influence of rapid-thermal-annealing temperature on properties of rf-sputtered SnOx thin films

2015 ◽  
Vol 327 ◽  
pp. 358-363 ◽  
Author(s):  
Yu-Hao Jiang ◽  
I-Chung Chiu ◽  
Peng-Kai Kao ◽  
Jyun-Ci He ◽  
Yu-Han Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rapid Thermal Annealing Temperature

Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Gaas Substrates ◽  
Different Temperatures

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

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