Linearity improvement of HfOx-based memristor with multilayer structure

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2020 ◽  
Author(s):  
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Sergei S. Sakhonenkov ◽  
Aidar U. Gaisin ◽  
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In the present study, the formation of intermediate compounds in the Mo/Si multilayer was realized by the introduction of barrier layers at the interfaces.


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Vol 4 (4) ◽  
pp. 1115-1123 ◽  
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