Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs

2022 ◽  
Vol 137 ◽  
pp. 106222
Author(s):  
Jayjit Mukherjee ◽  
Rupesh K. Chaubey ◽  
D.S. Rawal ◽  
R.S. Dhaka
Keyword(s):  
Leakage Current ◽  
Stress Recovery ◽  
Reverse Leakage Current ◽  
Gan Hemts ◽  
Post Stress

scholarly journals Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097154 ◽  
Author(s):  
YongHe Chen ◽  
XiaoHua Ma ◽  
WeiWei Chen ◽  
Bin Hou ◽  
JinCheng Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reverse Leakage Current ◽  
Gan Hemts ◽  
Gate Edge

β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Current Modulation ◽  
Reverse Leakage Current

scholarly journals Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

2021 ◽  
Vol 118 (7) ◽  
pp. 072103
Author(s):  
T. Liu ◽  
H. Watanabe ◽  
S. Nitta ◽  
J. Wang ◽  
G. Yu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gan Hemts ◽  
Mg Doped

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

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