In-situ Studies on Deformation and Fracture Characteristics of AZ91 Mg alloy

Materialia ◽  
2021 ◽  
pp. 101177
Author(s):  
R. Sarvesha ◽  
D. Chalapathi ◽  
Manasij Yadava ◽  
J. Jain ◽  
S.S. Singh
1993 ◽  
Vol 2 (3) ◽  
pp. 267-276 ◽  
Author(s):  
W.W. Milligan ◽  
S.A. Hackney ◽  
M. Ke ◽  
E.C. Aifantis

Author(s):  
Caleb P. Massey ◽  
Nitish Bibhanshu ◽  
Maxim N. Gussev ◽  
Cody J. Havrilak ◽  
Andrew T. Nelson

AbstractThe microstructural evolution, deformation modes, and fracture mechanisms of zirconium plate produced using ultrasonic additive manufacturing (UAM) are presented. In addition to conventional tensile testing techniques, digital image correlation captured highly variable strain accumulation in specimens loaded perpendicular or parallel to the build height (Z). When tested in parallel to Z, delamination at prior foil/foil interfaces creates strain localization noticeable in strain rate maps, whereas specimens loaded perpendicular to Z illustrate conventional strain hardening until necking accelerates delamination. Although bond strengths are statistically and spatially variable, in situ electron backscattering diffraction tests illustrate the ability for grains near interfaces to accommodate strain with twinning and slip modes consistent with conventionally produced zirconium alloys. Finally, mixtures of ductile and delamination-induced fracture highlight the interface-driven failure modes of UAM zirconium plate in the as-built condition. Graphic abstract


Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.


Author(s):  
Domonkos Tolnai ◽  
Sarkis Gavras ◽  
Fabian Wilde ◽  
Jörg U. Hammel ◽  
Stefan Bruns

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