Low temperature defect passivation technology for semiconductor electronic devices—supercritical fluids treatment process

2020 ◽  
Vol 14 ◽  
pp. 100225 ◽  
Author(s):  
T.-C. Chang ◽  
P.-H. Chen ◽  
C.-Y. Lin ◽  
C.-C. Shih
Keyword(s):  
Low Temperature ◽  
Supercritical Fluids ◽  
Treatment Process ◽  
Electronic Devices ◽  
Semiconductor Electronic ◽  
Defect Passivation

Highly Tough, Freezing-Tolerant, Healable and Thermoplastic Starch/Poly(vinyl alcohol) Organohydrogels for Flexible Electronic Devices

2021 ◽  
Author(s):  
Jing Lu ◽  
Jianfeng Gu ◽  
Oudong Hu ◽  
Yunhan Fu ◽  
Dezhan Ye ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electronic Devices ◽  
Future Generation ◽  
Thermoplastic Starch ◽  
Poly Vinyl Alcohol ◽  
Temperature Resistance ◽  
Large Application ◽  
Conductive Hydrogels ◽  
Low Temperature Resistance ◽  
Application Prospects

The conductive hydrogels have found large application prospects in fabricating flexible multifunctional electronic devices for future-generation wearable human-machine interactions. However, the inferior mechanical strength, low temperature resistance, and non-recyclability induced...

Easy Strategy to Enhance Thermal Stability of Planar PSCs by Perovskite Defect Passivation and Low-Temperature Carbon-Based Electrode

2020 ◽  
Vol 12 (29) ◽  
pp. 32536-32547
Author(s):  
Emanuele Calabrò ◽  
Fabio Matteocci ◽  
Barbara Paci ◽  
Lucio Cinà ◽  
Luigi Vesce ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Defect Passivation ◽  
Thermal Stability Of ◽  
Carbon Based

scholarly journals Difference of Oxide Hetero-structure Junctions with Semiconductor Electronic Devices

2008 ◽  
Vol 25 (9) ◽  
pp. 3378-3380 ◽  
Author(s):  
Xiong Guang-Cheng ◽  
Chen Yuan-Sha ◽  
Chen Li-Ping ◽  
Lian Gui-Jun
Keyword(s):  
Electronic Devices ◽  
Hetero Structure ◽  
Semiconductor Electronic

Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process

2020 ◽  
Vol 41 (10) ◽  
pp. 1540-1543
Author(s):  
Wei-Chun Hung ◽  
Fu-Yuan Jin ◽  
Ting-Chang Chang ◽  
Fong-Min Ciou ◽  
Chin-Han Chang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Supercritical Fluid ◽  
Treatment Process ◽  
Fast Recovery

LJ707-Crnimo Flux Cored Wire of Basic Slag System Be Applied to Non-Preheating Welding Technology of HSLA

2013 ◽  
Vol 364 ◽  
pp. 584-588
Author(s):  
Tao Gao Hurile ◽  
Fu Rong Chen ◽  
Yong Fei Hao ◽  
Ai Ai Zhang
Keyword(s):  
Low Temperature ◽  
Welded Joints ◽  
Treatment Process ◽  
Slag System ◽  
Bending Test ◽  
Cored Wire ◽  
Microstructure Observation ◽  
Heating Treatment ◽  
Temperature Impact ◽  
The Impact

This article investigates the welded joints of HSLA Q550 without preheating and post-heating treatment process. Tensile test, bending test, low temperature impact test, and the impact fractures and joint microstructure observation and analysis are used.The test result shows that the welded joins achieves equal strength with base metal. The average values of the welded joints impact absorbed energy at-20 °C are greater than 40J and at-40 °C its average values are greater than 27J, thus the low-temperature impact energy joint can meet the service requirements of hydraulic support. It shows that choosing proper welding material, developing reasonable welding and post-heating treatment process can cancel the preheating process of Q550 steel welding.

scholarly journals High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

ACS Nano ◽  
2016 ◽  
Vol 10 (10) ◽  
pp. 9550-9558 ◽  
Author(s):  
Chanyoung Yim ◽  
Kangho Lee ◽  
Niall McEvoy ◽  
Maria O’Brien ◽  
Sarah Riazimehr ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Electronic Devices

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices

2013 ◽  
Vol 52 (52) ◽  
pp. 14121-14126 ◽  
Author(s):  
Dacheng Wei ◽  
Yunhao Lu ◽  
Cheng Han ◽  
Tianchao Niu ◽  
Wei Chen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Low Temperature ◽  
Electronic Devices ◽  
Dielectric Substrates

Low Temperature ECR -Plasma Assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Characterization for Electronic Devices

1998 ◽  
Vol 536 ◽  
Author(s):  
Z. Hassan ◽  
M. E. Kordesch ◽  
W. M. Jadwisienzak ◽  
H. J. Lozykowski ◽  
W. Halverson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Phonon Mode ◽  
Molecular Nitrogen ◽  
Electronic Devices ◽  
Diffraction Peak ◽  
Ecr Plasma ◽  
Broad Emission ◽  
Optically Transparent ◽  
Temperature Controlled ◽  
Reactor Pressure

AbstractGaN films have been deposited over a range of temperatures from 50 C to 650 C by ECR plasma MOCVD on silicon (111) and (100), sapphire and quartz using triethylgallium and molecular nitrogen or ammonia as reagents. Growth rates of 2 um/hr are achieved on temperature-controlled substrates (total reactor pressure 0.5 mTorr, 250 watts at 2.45 GHz).Films deposited at 200, 600 and 650 C on sapphire show the GaN(0002) diffraction peak and sharp photoluminescence lines (at 10 K) between 370 and 400 nm and broad emission at 530-550 nm. Broad photoluminescence at 390 nm is observed from GaN/Si( 11). Films deposited at 50 and 100 C show no evidence of a crystalline phase or GaN(0002) diffraction peak. The films are smooth and optically transparent. A broad photoluminescence peak at 520 nm, with a fwhm of about 150 nm is also observed (at 10K). The optical bandgap is measured to be about 2.6-2.7 eV. All of these films show a GaN LO phonon mode at 736 cm-l. IR spectra indicate some hydrocarbon impurities in the low temperature films.Prototype devices (Schottky barrier diodes) have been made from MOCVD GaN and amorphous GaN.

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