Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices

2013 ◽  
Vol 52 (52) ◽  
pp. 14121-14126 ◽  
Author(s):  
Dacheng Wei ◽  
Yunhao Lu ◽  
Cheng Han ◽  
Tianchao Niu ◽  
Wei Chen ◽  
...  
2013 ◽  
Vol 125 (52) ◽  
pp. 14371-14376 ◽  
Author(s):  
Dacheng Wei ◽  
Yunhao Lu ◽  
Cheng Han ◽  
Tianchao Niu ◽  
Wei Chen ◽  
...  

Alloy Digest ◽  
1980 ◽  
Vol 29 (12) ◽  

Abstract SOMERS LTA Copper is a wrought copper foil that can be annealed at 350 F in 15 minutes to the full-soft condition; its use simplifies the manufacture of printed circuits (LTA = Low-Temperature Annealable). LTA Copper is especially useful for foil weights up to and including one ounce per square foot (0.0014-inch thick) for laminating to high-temperature dielectric substrates. This datasheet provides information on composition, physical properties, and elasticity as well as fatigue. It also includes information on forming, heat treating, and machining. Filing Code: Cu-407. Producer or source: Olin Corporation.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1738
Author(s):  
Saeid Vafaei ◽  
Alexander Wolosz ◽  
Catlin Ethridge ◽  
Udo Schnupf ◽  
Nagisa Hattori ◽  
...  

SnO2 nanoparticles are regarded as attractive, functional materials because of their versatile applications. SnO2 nanoaggregates with single-nanometer-scale lumpy surfaces provide opportunities to enhance hetero-material interfacial areas, leading to the performance improvement of materials and devices. For the first time, we demonstrate that SnO2 nanoaggregates with oxygen vacancies can be produced by a simple, low-temperature sol-gel approach combined with freeze-drying. We characterize the initiation of the low-temperature crystal growth of the obtained SnO2 nanoaggregates using high-resolution transmission electron microscopy (HRTEM). The results indicate that Sn (II) hydroxide precursors are converted into submicrometer-scale nanoaggregates consisting of uniform SnO2 spherical nanocrystals (2~5 nm in size). As the sol-gel reaction time increases, further crystallization is observed through the neighboring particles in a confined part of the aggregates, while the specific surface areas of the SnO2 samples increase concomitantly. In addition, X-ray photoelectron spectroscopy (XPS) measurements suggest that Sn (II) ions exist in the SnO2 samples when the reactions are stopped after a short time or when a relatively high concentration of Sn (II) is involved in the corresponding sol-gel reactions. Understanding this low-temperature growth of 3D SnO2 will provide new avenues for developing and producing high-performance, photofunctional nanomaterials via a cost-effective and scalable method.


Author(s):  
Jing Lu ◽  
Jianfeng Gu ◽  
Oudong Hu ◽  
Yunhan Fu ◽  
Dezhan Ye ◽  
...  

The conductive hydrogels have found large application prospects in fabricating flexible multifunctional electronic devices for future-generation wearable human-machine interactions. However, the inferior mechanical strength, low temperature resistance, and non-recyclability induced...


Clay Minerals ◽  
1986 ◽  
Vol 21 (5) ◽  
pp. 861-877 ◽  
Author(s):  
A. Decarreau ◽  
D. Bonnin

AbstractSyntheses of ferric smectites were performed at low temperature (75° C by aging coprecipitated gels of silica and Fe2+-sulphate under initially reducing then oxidizing conditions. Under strictly reducing conditions only nuclei of a trioctahedral ferrous stevensite were observed and crystal growth did not take place. When a spontaneous oxidization, in contact with air, was effected, the ferrous smectite nuclei transformed rapidly into a ferric, nontronite-like, smectite. Crystallogenesis of the ferric smectite was studied by XRD, IR, DTA, Mössbauer and EPR spectroscopies. The end-synthesis smectite contained only Fe3+ions, all located in the octahedral sheet. This clay was mixed with a cryptocrystalline iron oxide phase containing one-third of the iron atoms and undetectable by XRD.


Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  

1981 ◽  
Vol 52 ◽  
pp. 779-788 ◽  
Author(s):  
B. Simon ◽  
R. Boistelle

Sign in / Sign up

Export Citation Format

Share Document