Protonic acid catalysis to generate fast electronic transport channels in O-functionalized carbon textile with enhanced energy storage capability

A novel Lewis acid catalysis induced in situ phase change material (PCM) shape-stabilization strategy was developed to fabricate hyper-crosslinked polystyrene (HCPS) encapsulated PCMs towards highly efficient thermal energy storage.

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Fast electronic transport in organic molecular solids?

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581767 ◽

1999 ◽

Vol 17 (4) ◽

pp. 2318-2328 ◽

Cited By ~ 108

Author(s):

N. Karl ◽

K.-H. Kraft ◽

J. Marktanner ◽

M. Münch ◽

F. Schatz ◽

...

Keyword(s):

Electronic Transport ◽

Molecular Solids ◽

Fast Electronic

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Theoretical analysis of ferromagnetism and electronic transport aspects of CaM2S4 (M = Ti, Cr) spinels for the application of spintronic and energy storage system

Modern Physics Letters B ◽

10.1142/s0217984921501621 ◽

2020 ◽

pp. 2150162

Author(s):

Asif Mahmood ◽

Waheed Al-Masry ◽

M. Nabil Anwar ◽

M. Mufakkar Adaam ◽

Ghalib ul Islam ◽

...

Keyword(s):

Energy Storage ◽

Electronic Transport ◽

Density Functional ◽

Structural Parameters ◽

Storage System ◽

Ferromagnetic State ◽

Energy Difference ◽

Field Energy ◽

Generalized Gradient ◽

Magnetic Parameters

By using the density functional theory (DFT), we explored ferromagnetic and electronic transport aspects of CaM2S4 (M = Ti, Cr) spinels. For both spinels, we used PBEsol generalized gradient approximation (GGA) to investigate structural parameters and noted that studied spinels are good compared with the existing parameters. A novel exchange correlation potential, modified Becke and Johnson (mBJ), was utilized for the investigation of electronic, magnetic and transport aspects because we assure our predicting results of electronic bandgap to be consistent to the experiments. The energy difference between ferromagnetic and nonmagnetic states is calculated to check the structural stability of ferromagnetic state. Further, the calculations of band structures and density of state have been explored to check ferromagnetic nature of semiconductor spinels that was further confirmed on the basis of exchange splitting energy and magnetic parameters. In addition, exchange constants ([Formula: see text] and [Formula: see text]) and crystal field energy [Formula: see text] along with magnetic moments were also calculated. Our calculated results of magnetic parameters indicate that these spinels are considered as suitable candidate for spintronic applications. Furthermore, to check the reliability of these spinels in energy storage systems, the electronic transport aspects were calculated in detail.

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Engineering 2D Nanofluidic Li‐Ion Transport Channels for Superior Electrochemical Energy Storage

Advanced Materials ◽

10.1002/adma.201703909 ◽

2017 ◽

Vol 29 (46) ◽

pp. 1703909 ◽

Cited By ~ 60

Author(s):

Chunshuang Yan ◽

Chade Lv ◽

Yue Zhu ◽

Gang Chen ◽

Jingxue Sun ◽

...

Keyword(s):

Energy Storage ◽

Ion Transport ◽

Electrochemical Energy Storage ◽

Li Ion ◽

Transport Channels ◽

Electrochemical Energy

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Gate-modulated electronic transport through a graphene nanoribbon composed of nanoribbons of different widths

Journal of Theoretical and Computational Chemistry ◽

10.1142/s0219633615500054 ◽

2015 ◽

Vol 14 (01) ◽

pp. 1550005 ◽

Cited By ~ 1

Author(s):

Wen Liu ◽

Jie Cheng ◽

Jian-Hua Zhao ◽

Cai-Juan Xia ◽

De-Sheng Liu

Keyword(s):

Integrated Circuits ◽

Electronic Transport ◽

Density Functional ◽

Differential Resistance ◽

Graphene Nanoribbon ◽

Functional Theory ◽

The Density Functional Theory ◽

Effective Transport ◽

Transport Channels ◽

Non Equilibrium Green’S Function

Based on the non-equilibrium Green's function (NEGF) method combined with the density functional theory (DFT), we have studied the gate-modulated electronic properties of a graphene nanoribbon (GNR) which is composed of two GNRs of different widths. The results show that the charge transport is greatly modulated by the applied gate. Negative differential resistance (NDR) behaviors is found in such a system. With the increase in the gate, the NDR behaviors will disappear and reappear. Furthermore, under certain gate voltages multiple NDR behavior is found, the origin of which is attributed to the change of the number of effective transport channels and the variation of delocalization degree of the orbitals within the bias window. Interestingly, low bias NDR behavior is obtained which is desirable for integrated circuits from the point view of power consumption.

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A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: the problem of Coulomb explosion

10.1117/12.548823 ◽

2004 ◽

Cited By ~ 2

Author(s):

Nadezhda M. Bulgakova ◽

Razvan Stoian ◽

Arkadi Rosenfeld ◽

Wladimir Marine ◽

Eleanor E. Campbell

Keyword(s):

Electronic Transport ◽

Pulsed Laser ◽

Coulomb Explosion ◽

Continuum Approach ◽

General Continuum ◽

Fast Electronic

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Electronic transport properties of carbon and boron nitride chain heterojunctions

Journal of Materials Chemistry C ◽

10.1039/c6tc04936b ◽

2017 ◽

Vol 5 (5) ◽

pp. 1165-1178 ◽

Cited By ~ 10

Author(s):

Yi Zhou ◽

Yifan Li ◽

Jie Li ◽

Jichen Dong ◽

Hui Li

Keyword(s):

Boron Nitride ◽

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Free Standing ◽

Electronic Transport Properties ◽

Carbon Chains ◽

On Chip ◽

Transport Channels

Long, stable, and free-standing linear atomic carbon chains and boron nitride (BN) chains have been carved out from their 2D sheets recently [Meyer et al., Nature, 2008, 454(7202), 319; Jin et al. Phys. Rev. Lett., 2009, 102(20), 205501; Cretu et al., ACS Nano, 2014, 8(12), 11950], which could be used as transport channels or on-chip interconnects for field-effect transistors.

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