scholarly journals The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes

2017 ◽  
Vol 409 ◽  
pp. 241-245 ◽  
Author(s):  
E. Omotoso ◽  
W.E. Meyer ◽  
P.J. Janse van Rensburg ◽  
E. Igumbor ◽  
S.M. Tunhuma ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Proton Irradiation ◽  
High Energy ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
High Energy Proton ◽  
Energy Proton

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

2014 ◽  
Vol 778-780 ◽  
pp. 525-528 ◽  
Author(s):  
Matthieu Florentin ◽  
Mihaela Alexandru ◽  
Aurore Constant ◽  
Bernd Schmidt ◽  
José Millan ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Proton Irradiation ◽  
Electrical Response ◽  
Gate Oxide ◽  
High Energy ◽  
Low Energy ◽  
Electrical Characteristics ◽  
Proton Radiation ◽  
High Energy Proton ◽  
Energy Proton

The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an apparent improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work complete our previous studies on high energy proton irradiation, showing that the 4H-SiC MOSFET is also robust to the low energy proton radiation, when the proton implanted range is located near the MOS interface.

scholarly journals Effect of high energy proton irradiation on MAPbI3 films for space applications observed by micro-Raman spectroscopy

2020 ◽  
Vol 1 (6) ◽  
pp. 2068-2073
Author(s):  
Walter O. Herrera Martínez ◽  
Paula Giudici ◽  
Natalia B. Correa Guerrero ◽  
M. Luján Ibarra ◽  
M. Dolores Perez
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Space Applications ◽  
Micro Raman Spectroscopy ◽  
Energy Proton

10 MeV proton irradiation of a MAPbI3 thin film causes PbO formation when the surface is exposed to an O2 atmosphere.

Strongly enhanced flux pinning by high‐energy proton irradiation of a Tl2Ca2Ba2Cu3Oysingle crystal

1990 ◽  
Vol 56 (24) ◽  
pp. 2456-2458 ◽  
Author(s):  
E. L. Venturini ◽  
J. C. Barbour ◽  
D. S. Ginley ◽  
R. J. Baughman ◽  
B. Morosin
Keyword(s):  
Flux Pinning ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton

scholarly journals Potential for neutron and proton transmutation doping of GaN and Ga2O3

2020 ◽  
Vol 1 (1) ◽  
pp. 45-53
Author(s):  
Julie V. Logan ◽  
Elias B. Frantz ◽  
Lilian K. Casias ◽  
Michael P. Short ◽  
Christian P. Morath ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton ◽  
Transmutation Doping ◽  
P Type

High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

2017 ◽  
Vol 9 (46) ◽  
pp. 40471-40476 ◽  
Author(s):  
Gwangseok Yang ◽  
Soohwan Jang ◽  
Fan Ren ◽  
Stephen J. Pearton ◽  
Jihyun Kim
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Field Effect Transistors ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton
Sign in / Sign up

Export Citation Format

Share Document