Dynamics of reversible optical properties switching of Ge2Sb2Te5 thin films at laser-induced phase transitions

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Anton A. Burtsev ◽  
Nikolai N. Eliseev ◽  
Vladimir A. Mikhalevsky ◽  
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Songyou Wang ◽  
Rongjun Zhang ◽  
...  

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M. Sidir ◽  
V. L. Lorman ◽  
R. Farhi ◽  
J. Pavel ◽  
...  

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M. M. Wind

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E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


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