Sub-nanometer atomic layer deposited Al2O3 barrier layer for improving stability of nonfullerene organic solar cells

2021 ◽  
pp. 106351
Author(s):  
Shiwei Wu ◽  
Yanglin Zhao ◽  
Chi Wang ◽  
Shang Li ◽  
Renaud Bachelot ◽  
...  
Solar RRL ◽  
2020 ◽  
Vol 4 (10) ◽  
pp. 2000241
Author(s):  
Geedhika K. Poduval ◽  
Leiping Duan ◽  
Md. Anower Hossain ◽  
Borong Sang ◽  
Yu Zhang ◽  
...  

2018 ◽  
Vol 6 (30) ◽  
pp. 8051-8059 ◽  
Author(s):  
Ermioni Polydorou ◽  
Martha Botzakaki ◽  
Charalampos Drivas ◽  
Kostas Seintis ◽  
Ilias Sakellis ◽  
...  

Atomic layer deposition of HfO2 significantly increases the efficiency and prolongs the lifetime of organic solar cells.


2010 ◽  
Vol 11 (12) ◽  
pp. 1896-1900 ◽  
Author(s):  
Smita Sarkar ◽  
Jason H. Culp ◽  
Jon T. Whyland ◽  
Margret Garvan ◽  
Veena Misra

2010 ◽  
Vol 20 (5) ◽  
pp. 862-866 ◽  
Author(s):  
Jen-Chun Wang ◽  
Wei-Tse Weng ◽  
Meng-Yen Tsai ◽  
Ming-Kun Lee ◽  
Sheng-Fu Horng ◽  
...  

Solar RRL ◽  
2020 ◽  
Vol 4 (12) ◽  
pp. 2000497
Author(s):  
Leiping Duan ◽  
Borong Sang ◽  
Mingrui He ◽  
Yu Zhang ◽  
Md Anower Hossain ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 370
Author(s):  
Hyun-Jae Woo ◽  
Woo-Jae Lee ◽  
Eun-Kyong Koh ◽  
Seung Il Jang ◽  
Shinho Kim ◽  
...  

Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N2 plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe2 layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.


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