scholarly journals Plasma-Enhanced Atomic Layer Deposition of TiN Thin Films as an Effective Se Diffusion Barrier for CIGS Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 370
Author(s):  
Hyun-Jae Woo ◽  
Woo-Jae Lee ◽  
Eun-Kyong Koh ◽  
Seung Il Jang ◽  
Shinho Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Diffusion Barrier Layer ◽  
Tin Thin Films ◽  
Cigs Solar Cells ◽  
Tin Diffusion Barrier

Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N2 plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe2 layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.

High efficiency CIGS solar cells on flexible stainless steel substrate with SiO2 diffusion barrier layer

Solar Energy ◽  
2021 ◽  
Vol 230 ◽  
pp. 1033-1039
Author(s):  
Chen Zhang ◽  
Tongqing Qi ◽  
Wei Wang ◽  
Chenchen Zhao ◽  
Shuda Xu ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
High Efficiency ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Diffusion Barrier Layer ◽  
Cigs Solar Cells

Various Applications of Multifunctional Thin Films with Specific Properties Deposited by the ALD Method

2019 ◽  
Vol 293 ◽  
pp. 111-123
Author(s):  
Paulina Boryło ◽  
Marek Szindler ◽  
Krzysztof Lukaszkowicz
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Atomic Layer ◽  
Short Circuit Current ◽  
Transparent Conductive Oxide ◽  
Atomic Force ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

This paper presents application examples of atomic layer deposition method (ALD) adopted for production of multifunctional thin films for various usage such as passive, antireflection and transparent conductive films. First part of this paper introduces the mechanism of ALD process, in the rest of it, aluminum oxide (as passive and antireflection) and zinc oxide (as antireflection and transparent conductive) ALD thin films are presented. In the literature one can find reports on the use of the Al2O3 layer as passivating and ZnO layers as a transparent conductive oxide in diodes, polymeric and dye sensitized solar cells. In this article, the ALD layers were tested for their use in silicon solar cells, using their good electrical and optical properties. For examination of prepared thin films characteristics, following research methods were used: scanning electron microscope, atomic force microscope, X-ray diffractometer, ellipsometer, UV/VIS spectrometer and resistance measurements. By depositing a layer thickness of about 80 nm, the short-circuit current on the surface of the solar cell was increased three times while reducing the reflection of light. In turn, by changing the deposition temperature of the ZnO thin film, you can control its electrical properties while maintaining high transparency. The obtained results showed that the ALD method provide the ability to produce a high quality multifunctional thin films with the required properties.

Sign in / Sign up

Export Citation Format

Share Document