Dielectric and magneto-electric behavior of (x) Co0.8Mn0.2Fe2O4 and (1−x) PbZr0.52Ti0.48O3 composites

The electric behavior in semiconductor devices is the result of the electric carriers’ injection and evacuation in the low doping region, N-. The carrier’s dynamic is determined by the ambipolar diffusion equation (ADE), which involves the main physical phenomena in the low doping region. The ADE does not have a direct analytic solution since it is a spatio-temporal second-order differential equation. The numerical solution is the most used, but is inadequate to be integrated into commercial electric circuit simulators. In this paper, an empiric approximation is proposed as the solution of the ADE. The proposed solution was validated using the final equations that were implemented in a simulator; the results were compared with the experimental results in each phase, obtaining a similarity in the current waveforms. Finally, an advantage of the proposed methodology is that the final expressions obtained can be easily implemented in commercial simulators.

Download Full-text

Simulation and Optimization of a Carbon Nanotube Electron Source

Microscopy and Microanalysis ◽

10.1017/s1431927615013148 ◽

2015 ◽

Vol 21 (S4) ◽

pp. 60-65 ◽

Cited By ~ 1

Author(s):

Alexandr Knápek ◽

Tomáš Radlička ◽

Stanislav Krátký

Keyword(s):

Carbon Nanotube ◽

Electron Beam Lithography ◽

Fabrication Method ◽

Vertically Aligned Carbon Nanotubes ◽

Simulation And Optimization ◽

Gate Structure ◽

Aligned Carbon Nanotubes ◽

Electric Behavior ◽

Vertically Aligned ◽

Structure Calculations

AbstractThis paper deals with an optimization of a field-emission structure concept based on vertically aligned carbon nanotubes (CNT). A design concept for a fabrication method for a gate structure based on electron beam lithography is reviewed in the first part of the paper. A single carbon nanotube is grown by the PECVD method inside the gate structure. Calculations and simulations that help determine gate structure proportions in order to obtain the best possible electron reduced brightness and to predict the cathode's electric behavior are also essential parts of this study.

Download Full-text

The structural and electric behavior of SrBi2Ta2O9 ferroelectric thin films with H+ implantation

Physics Letters A ◽

10.1016/s0375-9601(98)00909-8 ◽

1999 ◽

Vol 251 (5) ◽

pp. 336-339 ◽

Cited By ~ 4

Author(s):

Jianming Zeng ◽

Lirong Zheng ◽

Chenglu Lin ◽

M. Alexe ◽

A. Pignolet ◽

...

Keyword(s):

Thin Films ◽

Ferroelectric Thin Films ◽

Electric Behavior

Download Full-text

Smart‐Cut® : The Basic Fabrication Process for Unibond® Soi Wafers

MRS Proceedings ◽

10.1557/proc-446-177 ◽

1996 ◽

Vol 446 ◽

Cited By ~ 6

Author(s):

A.J. Auberton‐Hervé ◽

T. Barge ◽

F. Metral ◽

M. Bruel ◽

B. Aspar ◽

...

Keyword(s):

Wafer Bonding ◽

Low Cost ◽

Bulk Silicon ◽

High Quality ◽

Thin Film Thickness ◽

Hydrogen Implantation ◽

Electric Behavior ◽

Bonding Technology ◽

Good Uniformity ◽

Quality Surface

AbstractThe advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart‐Cut® SOI process used for the manufacture of the Unibond® SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart‐Cut® process is described in detail and material characteristics of Unibond® wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.

Download Full-text

ECG 3D - Study of the electric behavior of the heart through a curve in space

Research ◽

10.13070/rs.en.1.1163 ◽

2014 ◽

Vol 1 ◽

Author(s):

Raúl F Jiménez ◽

Eduardo Lecannelier ◽

Claudia Jiménez ◽

Gustavo Dinamarca

Keyword(s):

Electric Behavior

Download Full-text

ChemInform Abstract: Crystal Structure, Thermal and Electric Behavior of [(CH3)2NH2]3 [As2Cl9] and [(CH3)2NH2][AsOCl2].

ChemInform ◽

10.1002/chin.200227003 ◽

2010 ◽

Vol 33 (27) ◽

pp. no-no

Author(s):

M. Wojtas ◽

Z. Ciunik ◽

G. Bator ◽

R. Jakubas

Keyword(s):

Crystal Structure ◽

Electric Behavior

Download Full-text

Low electrical percolation thresholds and nonlinear effects in graphene-reinforced nanocomposites: A numerical analysis

Journal of Composite Materials ◽

10.1177/0021998317753888 ◽

2018 ◽

Vol 52 (20) ◽

pp. 2767-2775 ◽

Cited By ~ 8

Author(s):

Xiaoxin Lu ◽

Julien Yvonnet ◽

Fabrice Detrez ◽

Jinbo Bai

Keyword(s):

Numerical Model ◽

Aspect Ratio ◽

Percolation Threshold ◽

Barrier Height ◽

Nonlinear Effects ◽

Tunneling Effect ◽

Graphene Sheets ◽

Microstructural Parameters ◽

Electric Behavior ◽

Percolation Thresholds

A numerical model of graphene-reinforced nanocomposites taking into account the electric tunneling effect is employed to analyze the influence of microstructural parameters on the effective electric conductivity and the percolation thresholds of the composite. The generation procedure for the random microstructures of graphene-reinforced nanocomposites is described. Effects of the barrier height, of graphene aspect ratio and alignment of graphene sheets have been quantitatively evaluated. The results show that both higher graphene aspect ratio and lower barrier height can lead to smaller percolation threshold, and the alignment of graphene sheets results in anisotropic electrical behavior without affecting the percolation threshold. The numerical model also shows the importance of the tunneling effect to reproduce the nonlinear electric behavior and the low percolation thresholds reported in the literature. Finally, results are compared with available experimental data.

Download Full-text