Fabrication of CeO2 buffer layer with high deposition rate on biaxially textured Ni–3%W substrate by electron beam evaporation

2011 ◽  
Vol 471 (21-22) ◽  
pp. 978-981 ◽  
Author(s):  
J.B. Lee ◽  
S.K. Park ◽  
B.J. Kim ◽  
H.J. Lee ◽  
S.S. Kim ◽  
...  
Keyword(s):  
Electron Beam ◽  
Buffer Layer ◽  
Deposition Rate ◽  
Electron Beam Evaporation ◽  
High Deposition Rate ◽  
Ceo2 Buffer Layer

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

High-Deposition-Rate Growth of Lead Titanate Zirconate Films by Reactive Electron Beam Coevaporation

1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5291-5293 ◽  
Author(s):  
Shoichi Mochizuki ◽  
Toshiyuki Mihara ◽  
Tadashi Ishida
Keyword(s):  
Electron Beam ◽  
Deposition Rate ◽  
Lead Titanate ◽  
High Deposition Rate ◽  
Lead Titanate Zirconate

Study of Stress in TiO2 Films Grown by Electron-Beam Evaporation

2011 ◽  
Vol 189-193 ◽  
pp. 1233-1237 ◽  
Author(s):  
Tao Chen ◽  
Duo Shu Wang ◽  
Yu Qing Xiong
Keyword(s):  
Electron Beam ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Beam Energy ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Average Stress ◽  
Si Substrate ◽  
Microstructure Change ◽  
Main Factors

TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in titanium oxide thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO2 films is main factors of stress development.

DEVELOPMENT OF BUFFER LAYER STRUCTURES FOR YBa2Cu3O7-δ COATED CONDUCTORS ON TEXTURED Ni-V SUBSTRATE

2000 ◽  
Vol 14 (25n27) ◽  
pp. 3128-3133
Author(s):  
A. MANCINI ◽  
V. BOFFA ◽  
G. CELENTANO ◽  
L. CIONTEA ◽  
M. DAMASCENI ◽  
...  
Keyword(s):  
Electron Beam ◽  
Buffer Layer ◽  
Electron Beam Evaporation ◽  
Coated Conductors ◽  
Morphological Properties ◽  
Metallic Substrates ◽  
Good Surface ◽  
Layer Structures ◽  
Continuous Surface ◽  
Ybco Coated Conductors

Y 2 O 3 and MgO-based buffer layer architectures on non-magnetic cube textured Ni-V substrates were studied for YBa 2 Cu 3 O 7-δ (YBCO) coated conductors fabrication using both pulsed laser deposition and electron beam evaporation. The Y 2 O 3 films exhibited a biaxial texture with φ and ω-scans full width at half maximum (FWHM) of about 11° and 7° and a smooth and continuous surface. YBCO thick films deposited on CeO 2/ Y 2 O 3/ Ni-V and CeO 2/ Y 2 O 3/ NiO/Ni-V architectures were mainly c-axis oriented showing a T C(R=0) above 85 K. MgO films were grown by electron beam evaporation both directly on metallic substrates and with a Pd intermediate layer. The MgO films grown on Ni-V substrates show a good texture and good surface morphological properties. The MgO deposition on Pd buffered Ni-V substrate leads to films with better structural properties with respect to MgO deposition on bare Ni-V substrate, showing φ and ω-scans FWHM up to 8° and 5°, respectively. In spite of the interdiffusion between Pd buffer layer and Ni-V substrate, the MgO films preserve their structural and morphological properties when annealed at typical YBCO deposition temperature.

The Role of Al2O3 Buffer Layer in the Growth of Aligned CNTs

2008 ◽  
Vol 32 ◽  
pp. 29-32 ◽  
Author(s):  
M.K. Lai ◽  
Norani Muti Mohamed ◽  
K.M. Begam
Keyword(s):  
Carbon Nanotubes ◽  
Electron Beam ◽  
Buffer Layer ◽  
Iron Catalyst ◽  
Electron Beam Evaporation ◽  
Multiwalled Carbon ◽  
Al2o3 Layer ◽  
Si Wafer ◽  
Walled Cnts

Carbon nanotube (CNT) can be thought of as a hexagonal network of carbon atoms that has been rolled up to make a seamless cylinder. If they are consisting of one layer, they are termed singled-walled CNTs (SWNTs) while if there are multiple walls, they are called multi-walled CNTs (MWNTs). For most functional devices application, an aligned arrangement of CNTs is desired. Aligned multiwalled carbon nanotubes (MWNTs) have been successfully grown by the inclusion of a buffer layer of oxidized Al. An Al2O3 layer has been proven to be an important contributing factor towards obtaining good quality aligned CNTs. In this work, Al is deposited onto the Si wafer using electron beam evaporation and later oxidized by heating in air. A thin layer of iron catalyst is then deposited on top of the oxidized Al layer and annealed at 400oC. The result shows an improvement in the intensity of the graphitization peak (G-band) in the Raman spectra and aligned MWNTs is observed in these samples compared to the ones that have undergone the same process parameter except the Al2O3 layer.

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