Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

scholarly journals Low-temperature, high-speed reactive deposition of metal oxides for perovskite solar cells

2019 ◽  
Vol 7 (5) ◽  
pp. 2283-2290 ◽  
Author(s):  
Thomas J. Routledge ◽  
Michael Wong-Stringer ◽  
Onkar S. Game ◽  
Joel A. Smith ◽  
James E. Bishop ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Metal Oxides ◽  
High Speed ◽  
Perovskite Solar Cells ◽  
Electron Beam Evaporation ◽  
Reactive Deposition ◽  
Charge Extraction

Perovskite solar cells utilising NiO and TiO2 charge-extraction layers, deposited via high-speed, low substrate-temperature reactive electron-beam evaporation, achieve 15.8% PCE.

Electronic transport study of high deposition rate HWCVD a-Si:H by the microwavephotomixing technique

2001 ◽  
Vol 664 ◽  
Author(s):  
S.R. Sheng ◽  
R. Braunstein ◽  
B.P. Nelson ◽  
Y. Xu
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Flow Rate ◽  
Electronic Transport ◽  
High Deposition Rate ◽  
Deposition Pressure ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Potential Fluctuations

ABSTRACTThe electronic transport properties of high deposition rate a-Si:H films prepared by HWCVD have been investigated in detail by employing the microwave photomixing technique. The high deposition rates (up to 1 µm/min.) were achieved by adding a second filament, increasing deposition pressure, silane flow rate, and decreasing filament-to-substrate distance. The effect of the deposition rate on the resultant film properties with respect to the substrate temperature, deposition pressure and silane flow rate was studied. It was found that the film transport properties do not change monotonically with increasing deposition rate. The photoconductivity peaks at ∼70-90 Å/s, where both the drift mobility and lifetime peak, consistent with the deposition rate dependence of the range and depth of the potential fluctuations. High quality, such as a photoconductivity-to-dark-conductivity ratio of ∼105 and nearly constant low charged defect density, can be maintained at deposition rates up to ∼150 Å/s, beyond which the film properties deteriorate rapidly as a result of an enhanced effect of the long-range potential fluctuations due to a considerable increase in the concentration of the charged defects. Our present results indicate that medium silane flow rate, low pressure, and higher substrate temperature are generally required to maintain high quality films at high deposition rates.

Deposition of High Quality SiO2 Films Using Teos by ECR Plasma

1995 ◽  
Vol 396 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Sio2 Films ◽  
Silicon Source ◽  
Ecr Plasma

AbstractSiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Low-Temperature Indium Bonding for MEMS Devices

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002543-002566
Author(s):  
Daniel Harris ◽  
Robert Dean ◽  
Ashish Palkar ◽  
Mike Palmer ◽  
Charles Ellis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Mems Devices ◽  
Microfabrication Technique ◽  
Mems Device ◽  
Low Temperature Bonding ◽  
Bonding Technique ◽  
Si Wafer

Low–temperature bonding techniques are of great importance in fabricating MEMS devices, and especially for sealing microfluidic MEMS devices that require encapsulation of a liquid. Although fusion, thermocompression, anodic and eutectic bonding have been successfully used in fabricating MEMS devices, they require temperatures higher than the boiling point of commonly used fluids in MEMS devices such as water, alcohols and ammonia. Although adhesives and glues have been successfully used in this application, they may contaminate the fluid in the MEMS device or the fluid may prevent suitable bonding. Indium (In) possesses the unusual property of being cold weldable. At room temperature, two sufficiently clean In surfaces can be cold welded by bringing them into contact with sufficient force. The bonding technique developed here consists of coating and patterning one Si wafer with 500A Ti, 300A Ni and 1 μm In through electron beam evaporation. A second wafer is metallized and patterned with a 500A Ti and 1 μm Cu by electron beam evaporation and then electroplated with 10 μm of In. Before the In coated sections are brought into contact, the In surfaces are chemically cleaned to remove indium-oxide. Then the sections are brought into contact and held under sufficient pressure to cold weld the sections together. Using this technique, MEMS water-filled and mercury-filled microheatpipes were successfully fabricated and tested. Additionally, this microfabrication technique is useful for fabricating other types of MEMS devices that are limited to low-temperature microfabrication processes.

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

2018 ◽  
Vol 11 (01) ◽  
pp. 1850011
Author(s):  
Lipeng Ren ◽  
Wei Wang ◽  
Chenglei Yu ◽  
Saisai Duan ◽  
Wenjing Ma ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Electron Beam ◽  
Low Temperature ◽  
Surface Morphology ◽  
Silicon Substrate ◽  
Amorphous State ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Bilayer Structure

In this work, Ni films with the thickness of 50[Formula: see text]nm were deposited on (110) silicon substrate by electron beam evaporation at the temperature of 125[Formula: see text]C, 300[Formula: see text]C and 500[Formula: see text]C. Graphene was prepared on Ni films by PECVD to study the effect of Ni film structure and surface morphology on the graphene grown by PECVD. The result shows that the particle size and surface roughness of Ni film increase, as the temperature of substrate go up. The Ni film deposited at 125[Formula: see text]C exhibits amorphous state, and the Ni films deposited at 300[Formula: see text]C and 500[Formula: see text]C exhibit (111) microcrystal structure. The graphene grown on the microcrystalline Ni film deposited at 300[Formula: see text]C is the bilayer structure with less defects and uniform morphology. The graphene prepared on the microcrystalline Ni film deposited at 500[Formula: see text]C has more defects, layers and obvious plane undulation. The analysis indicates that microcrystalline Ni film deposited at 300[Formula: see text]C can be used by PECVD at low temperature to prepare a bilayer graphene with less defects and uniform morphology.

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