High brightness tapered lasers based on quantum dots at 920 nm with enhanced temperature stability of the emission wavelength for uncooled pump applications

Author(s):  
W. Kaiser ◽  
R. Debusmann ◽  
M. Kamp ◽  
J.P. Reithmaier ◽  
A. Forchel
The Analyst ◽  
2021 ◽  
Author(s):  
Stephanie K. Loeb ◽  
Haoran Wei ◽  
Jae-Hong Kim

The fluorescence emission wavelength shift of CdSe quantum dots due to heat-induced lattice dilatation is used to spatially resolve temperatures in solar photothermal systems.


2015 ◽  
Vol 1788 ◽  
pp. 19-21 ◽  
Author(s):  
Audrey Sanchot ◽  
Marianne Consonni ◽  
Stéphanie Le Calvez ◽  
Ivan C. Robin ◽  
François Templier

ABSTRACTWe have demonstrated the color conversion of blue micro-LEDs by means of QDs. In this paper, we will present characterizations that highlight this phenomenon. We already obtained conversion with a complete disappearance of the blue incident signal and a strong color saturation from deep blue (x=0,1626; y=0,0144) to deep red (x=0,6743; y=0,3244).


2017 ◽  
Vol 111 (22) ◽  
pp. 221102 ◽  
Author(s):  
Alessandro Surrente ◽  
Marco Felici ◽  
Pascal Gallo ◽  
Alok Rudra ◽  
Benjamin Dwir ◽  
...  

2005 ◽  
Vol 26 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
Y. Sakuma ◽  
K. Takemoto ◽  
S. Hirose ◽  
T. Usuki ◽  
N. Yokoyama

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.


Author(s):  
Bin Xie ◽  
Haochen Liu ◽  
Xiao Wei Sun ◽  
Xingjian Yu ◽  
Kai Wang ◽  
...  

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI). While, QDs’ poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QSNs/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7 % higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs’ temperature can reach 11.5 °C, 21.3 °C and 30.3 °C at driving current of 80 mA, 200 mA and 300 mA, respectively.


2021 ◽  
Vol 60 (SB) ◽  
pp. SBBE02
Author(s):  
Toshiya Tsuji ◽  
Nobuhiko Ozaki ◽  
Sho Yamauchi ◽  
Katsuya Onoue ◽  
Eiichiro Watanabe ◽  
...  

2019 ◽  
Vol 7 (12) ◽  
pp. 3429-3435 ◽  
Author(s):  
Sukyung Choi ◽  
Jaehyun Moon ◽  
Hyunsu Cho ◽  
Byoung-Hwa Kwon ◽  
Nam Sung Cho ◽  
...  

Surface-exchanged, partially pyridine-functionalized colloidal quantum dot-based light-emitting diodes (QD-LEDs) exhibit a low turn-on voltage and high brightness.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jae-Sung Lee ◽  
Byoung-Ho Kang ◽  
Sae-Wan Kim ◽  
Jin-Beom Kwon ◽  
Ok-Sik Kim ◽  
...  

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