The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.
Electric-field-driving effective separation of photoexcited electron–hole pairs in the P2/MoSe2 vdW heterostructure.
InSe/MoSe2(WSe2) vdWHs with type-II alignment, effectively tuned by E-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.