Type II GaS/AlN van der Waals heterostructure: Vertical strain, in-plane biaxial strain and electric field effect

2021 ◽  
Vol 126 ◽  
pp. 114481
Author(s):  
Hui Zou ◽  
Mengqi Peng ◽  
Wenzhe Zhou ◽  
Jiangling Pan ◽  
Fangping Ouyang
2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  

2020 ◽  
Vol 528 ◽  
pp. 146782 ◽  
Author(s):  
Ru Zhang ◽  
Yan Zhang ◽  
Xing Wei ◽  
Tingting Guo ◽  
Jibin Fan ◽  
...  

Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  

The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.


2020 ◽  
Vol 1 (6) ◽  
pp. 1849-1857
Author(s):  
Huabing Shu

Electric-field-driving effective separation of photoexcited electron–hole pairs in the P2/MoSe2 vdW heterostructure.


2018 ◽  
Vol 6 (37) ◽  
pp. 10010-10019 ◽  
Author(s):  
Xueping Li ◽  
Guangrui Jia ◽  
Juan Du ◽  
Xiaohui Song ◽  
Congxin Xia ◽  
...  

InSe/MoSe2(WSe2) vdWHs with type-II alignment, effectively tuned by E-field and vertical strain, are systematically discussed for future applications in optoelectronic devices.


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