Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure
2005 ◽
Keyword(s):
2018 ◽
Vol 51
(35)
◽
pp. 355203
◽
2006 ◽
Vol 45
(4B)
◽
pp. 3587-3591
◽
Keyword(s):
2010 ◽
Vol 30
(5)
◽
pp. 579-590
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Keyword(s):
2008 ◽
Vol 40
(6-7)
◽
pp. 974-978
◽
2005 ◽
Vol 200
(1-4)
◽
pp. 364-367
◽
Keyword(s):
2003 ◽
Vol 36
(23)
◽
pp. 3057-3063
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