Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure

2019 ◽  
Vol 60 ◽  
pp. 265-273
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Kiyoshi Yasutake
2019 ◽  
Vol 25 (8) ◽  
pp. 405-412
Author(s):  
Keita Tabuchi ◽  
Kentato Ouchi ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake

2006 ◽  
Vol 45 (4B) ◽  
pp. 3587-3591 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Yasuhito Kuwahara ◽  
Mitsuhiro Matsumoto ◽  
Yusuke Ebata ◽  
...  

2008 ◽  
Vol 40 (6-7) ◽  
pp. 974-978 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Masatoshi Aketa ◽  
Ryota Nakamura ◽  
Kiyoshi Yasutake

2005 ◽  
Vol 200 (1-4) ◽  
pp. 364-367 ◽  
Author(s):  
K. Schade ◽  
F. Stahr ◽  
S. Röhlecke ◽  
O. Steinke ◽  
R.H. Richter ◽  
...  

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