High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure

2006 ◽  
Vol 45 (4B) ◽  
pp. 3587-3591 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Yasuhito Kuwahara ◽  
Mitsuhiro Matsumoto ◽  
Yusuke Ebata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
High Frequency ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure

2005 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Yasuhito Kuwahara ◽  
Mitsuhiro Matsumoto ◽  
Yusuke Ebata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
High Frequency ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma

2019 ◽  
Vol 25 (8) ◽  
pp. 405-412
Author(s):  
Keita Tabuchi ◽  
Kentato Ouchi ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake
Keyword(s):  
Atmospheric Pressure ◽  
High Frequency ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Si Films ◽  
Very High

Recent advances in very high frequency plasma enhanced CVD process for the fabrication of thin film silicon solar cells

2009 ◽  
Vol 517 (17) ◽  
pp. 4758-4761 ◽  
Author(s):  
Jatindra K. Rath ◽  
Yanchao Liu ◽  
Monica Brinza ◽  
Arjan Verkerk ◽  
Caspar van Bommel ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Frequency ◽  
Silicon Solar Cells ◽  
Very High Frequency ◽  
Plasma Enhanced Cvd ◽  
Recent Advances ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

2007 ◽  
Vol 989 ◽  
Author(s):  
Guozhen Yue ◽  
Baojie Yan ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Cell Performance ◽  
High Rate ◽  
Active Area ◽  
Very High Frequency ◽  
Single Junction ◽  
Very High

AbstractWe report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

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