Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High Frequency Plasma

ECS Meeting Abstracts ◽

10.1149/ma2009-02/34/2510 ◽

2009 ◽

Keyword(s):

Atmospheric Pressure ◽

High Frequency ◽

High Rate ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

Si Films ◽

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Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma

ECS Transactions ◽

10.1149/1.3207619 ◽

2019 ◽

Vol 25 (8) ◽

pp. 405-412

Author(s):

Keita Tabuchi ◽

Kentato Ouchi ◽

Hiromasa Ohmi ◽

Hiroaki Kakiuchi ◽

Kiyoshi Yasutake

Keyword(s):

Atmospheric Pressure ◽

High Frequency ◽

High Rate ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

Si Films ◽

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High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure

10.7567/ssdm.2005.p8-4 ◽

2005 ◽

Author(s):

Hiroaki Kakiuchi ◽

Hiromasa Ohmi ◽

Yasuhito Kuwahara ◽

Mitsuhiro Matsumoto ◽

Yusuke Ebata ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Atmospheric Pressure ◽

High Frequency ◽

High Rate ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

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High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3587 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3587-3591 ◽

Author(s):

Hiroaki Kakiuchi ◽

Hiromasa Ohmi ◽

Yasuhito Kuwahara ◽

Mitsuhiro Matsumoto ◽

Yusuke Ebata ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Atmospheric Pressure ◽

High Frequency ◽

High Rate ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

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Characterization of hydrogenated amorphous Si1 xCxfilms prepared at extremely high rates using very high frequency plasma at atmospheric pressure

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/36/23/029 ◽

2003 ◽

Vol 36 (23) ◽

pp. 3057-3063 ◽

Author(s):

Y Mori ◽

H Kakiuchi ◽

K Yoshii ◽

K Yasutake ◽

H Ohmi

Keyword(s):

Atmospheric Pressure ◽

High Frequency ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

Hydrogenated Amorphous ◽

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Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2013.06.108 ◽

2013 ◽

Vol 234 ◽

pp. 2-7 ◽

Author(s):

H. Kakiuchi ◽

H. Ohmi ◽

T. Yamada ◽

A. Hirano ◽

T. Tsushima ◽

...

Keyword(s):

Atmospheric Pressure ◽

High Frequency ◽

Thin Film Transistors ◽

High Rate ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

Effective Phase ◽

Very High ◽

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High rate deposition of diamond like carbon films by very high frequency plasma enhanced chemical vapor deposition at 100 MHz

Journal of Applied Physics ◽

10.1063/1.1561997 ◽

2003 ◽

Vol 93 (10) ◽

pp. 6361-6369 ◽

Author(s):

Sushil Kumar ◽

P. N. Dixit ◽

D. Sarangi ◽

R. Bhattacharyya

Keyword(s):

Vapor Deposition ◽

High Frequency ◽

Chemical Vapor ◽

Carbon Films ◽

High Rate ◽

Diamond Like Carbon ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

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Microstructure characterization of microcrystalline silicon thin films deposited by very high frequency plasma-enhanced chemical vapor deposition by spectroscopic ellipsometry

Thin Solid Films ◽

10.1016/j.tsf.2011.04.166 ◽

2011 ◽

Vol 520 (2) ◽

pp. 861-865 ◽

Author(s):

He Zhang ◽

Xiaodan Zhang ◽

Changchun Wei ◽

Jian Sun ◽

Xinhua Geng ◽

...

Keyword(s):

Vapor Deposition ◽

High Frequency ◽

Chemical Vapor ◽

Microcrystalline Silicon ◽

Very High Frequency ◽

Silicon Thin Films ◽

High Frequency Plasma ◽

Frequency Plasma ◽

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Growth and characterization of microcrystalline silicon films and devices using very high frequency plasma enhanced chemical vapor deposition

10.31274/rtd-20200803-197 ◽

2003 ◽

Author(s):

Joshua Ali Graves

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Frequency ◽

Chemical Vapor ◽

Microcrystalline Silicon ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

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Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aad47c ◽

2018 ◽

Vol 51 (35) ◽

pp. 355203 ◽

Author(s):

Hiroaki Kakiuchi ◽

Hiromasa Ohmi ◽

Kiyoshi Yasutake

Keyword(s):

Electrical Properties ◽

Atmospheric Pressure ◽

High Frequency ◽

Silicon Films ◽

Very High Frequency ◽

High Frequency Plasma ◽

Frequency Plasma ◽

Structural And Electrical Properties ◽

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Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure

Precision Engineering ◽

10.1016/j.precisioneng.2019.07.017 ◽

2019 ◽

Vol 60 ◽

pp. 265-273

Author(s):

Hiroaki Kakiuchi ◽

Hiromasa Ohmi ◽

Kiyoshi Yasutake

Keyword(s):

Formation Process ◽

Atmospheric Pressure ◽

High Frequency ◽

Low Temperatures ◽

Silicon Oxide ◽

Very High Frequency ◽

Oxide Layers ◽

High Frequency Plasma ◽

Frequency Plasma ◽

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