EPR characterization in natural quartz samples of a newly discovered hydrogen related defect and already known germanium related defects

Previous studies of Y2BaCuO5/YBa2Cu3O7-δ(Y211/Y123) interfaces in melt-processed and quench-melt-growth processed YBa2Cu3O7-δ using high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) have revealed a high local density of stacking faults in Y123, near the Y211/Y123 interfaces. Calculations made using simple energy considerations suggested that these stacking faults may act as effective flux-pinners and may explain the observations of increased Jc with increasing volume fraction of Y211. The present paper is intended to determine the atomic structures of the observed defects. HRTEM imaging was performed using a Philips CM30 (300 kV) TEM with a point-to-point image resolution of 2.3 Å. Nano-probe EDS analysis was performed using a Philips EM400 TEM/STEM (100 kV) equipped with a field emission gun (FEG), which generated an electron probe of less than 20 Å in diameter.Stacking faults produced by excess single Cu-O layers: Figure 1 shows a HRTEM image of a Y123 film viewed along [100] (or [010]).

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Electron spin resonance of palladium-related defect in silicon

Journal of End-to-End-testing ◽

10.1016/s9999-9994(09)20511-3 ◽

2009 ◽

Vol 404 (23-24) ◽

pp. 4586-4589

Author(s):

T. Ishiyama ◽

S. Kimura ◽

Y. Kamiura ◽

Y. Yamashita

Keyword(s):

Electron Spin Resonance ◽

Electron Spin ◽

Spin Resonance ◽

Related Defect

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Studies of Nucleation and Propagation of Cracks in Natural Quartz

The Journal of Gemmology ◽

10.15506/jog.1976.15.3.129 ◽

1976 ◽

Vol 15 (3) ◽

pp. 129-135 ◽

Cited By ~ 1

Author(s):

M. S. Joshi ◽

B. K. Paul

Keyword(s):

Natural Quartz

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Burn-In Acceleration Considerations in 130nm and 90nm Products

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0389 ◽

2005 ◽

Author(s):

Nobuyuki Wakai ◽

Yuji Kobira ◽

Takashi Setoya ◽

Tamotsu Oishi ◽

Shinichi Yamasaki

Keyword(s):

Failure Analysis ◽

Shape Parameter ◽

Defect Density ◽

Failure Mechanisms ◽

Effective Procedure ◽

Time Period ◽

Related Defect ◽

The Relationship

Abstract An effective procedure to determine the Burn-In acceleration factors for 130nm and 90 nm processes are discussed in this paper. The relationship among yield, defect density, and reliability, is well known and well documented for defect mechanisms. In particular, it is important to determine the suitable acceleration factors for temperature and voltage to estimate the exact Burn- In conditions needed to screen these defects. The approach in this paper is found to be useful for recent Cu-processes which are difficult to control from a defectivity standpoint. Performing an evaluation with test vehicles of 130nm and 90nm technology, the following acceleration factors were obtained, Ea>0.9ev and β (Beta)>-5.85. In addition, it was determined that a lower defect density gave a lower Weibull shape parameter. As a result of failure analysis, it is found that the main failures in these technologies were caused by particles, and their Weibull shape parameter “m” was changed depending of the related defect density. These factors can be applied for an immature time period where the process and products have failure mechanisms dominated by defects. Thus, an effective Burn-In is possible with classification from the standpoint of defect density, even from a period of technology immaturity.

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A Case Study of Defects Due to Process-Design Interaction in Nano Scale Technology

ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2007p0172 ◽

2007 ◽

Author(s):

Hung-Sung Lin ◽

Ying-Chin Hou ◽

Juimei Fu ◽

Mong-Sheng Wu ◽

Vincent Huang ◽

...

Keyword(s):

Liquid Crystal ◽

Circuit Design ◽

Process Design ◽

Integrated Circuit ◽

Photon Emission ◽

Integrated Circuit Design ◽

Nano Scale ◽

Leakage Path ◽

Related Defect

Abstract The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in nano scale technology node. Most of the defects causing chip leakage are detectable with only one of the FA (Failure Analysis) tools such as LCD (Liquid Crystal Detection) or PEM (Photon Emission Microscope). However, due to marginality of process-design interaction some defects are often not detectable with only one FA tool [1][2]. This paper present an example of an abnormal power consumption process-design interaction related defect which could only be detected with more advanced FA tools.

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