scholarly journals Oxygen related defects and vacancy clusters identified in sputtering grown UOx thin films by positron annihilation techniques

2021 ◽  
pp. 104513
Author(s):  
C. Macchi ◽  
A. Somoza ◽  
J. Guimpel ◽  
S. Suárez ◽  
W. Egger ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Vacancy Clusters

scholarly journals Photochromic YOxHy Thin Films Examined by in situ Positron Annihilation Spectroscopy

2020 ◽  
Vol 137 (2) ◽  
pp. 205-208 ◽  
Author(s):  
S.W.H. Eijt ◽  
T.W.H. de Krom ◽  
D. Chaykina ◽  
H. Schut ◽  
G. Colombi ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy

Photoluminescence and positron annihilation spectroscopy of MeV Si+ ion-irradiated SiyO1−y:Er (y≈1/3) thin films

2009 ◽  
Vol 105 (5) ◽  
pp. 053517
Author(s):  
D. E. Blakie ◽  
O. H. Y. Zalloum ◽  
J. Wojcik ◽  
E. A. Irving ◽  
A. P. Knights ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy

Microstructure evolution of amorphous silicon thin films upon annealing studied by positron annihilation

2016 ◽  
Vol 56 ◽  
pp. 344-348 ◽  
Author(s):  
Xiaonan Wang ◽  
Xiaoyu He ◽  
Wenfeng Mao ◽  
Yawei Zhou ◽  
Shuliang Lv ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Positron Annihilation ◽  
Microstructure Evolution ◽  
Silicon Thin Films

Study of nitrogen implanted amorphous hydrogenated carbon thin films by variable-energy positron annihilation spectroscopy

1997 ◽  
Vol 81 (5) ◽  
pp. 2451-2453 ◽  
Author(s):  
F. L. Freire ◽  
D. F. Franceschini ◽  
R. S. Brusa ◽  
G. R. Karwasz ◽  
G. Mariotto ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Carbon Thin Films ◽  
Amorphous Hydrogenated Carbon ◽  
Variable Energy

scholarly journals Study of Microvoids in High-Rate a-Si:H Using Positron Annihilation

1997 ◽  
Vol 467 ◽  
Author(s):  
X. Zou ◽  
D. P. Webb ◽  
S. H. Lin ◽  
Y. W. Lam ◽  
Y. C. Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Surface Region ◽  
Positron Beam ◽  
High Rate ◽  
Doppler Broadening ◽  
Slow Positron ◽  
Depth Profiles ◽  
Vacancy Type Defect ◽  
Low Rate

ABSTRACTIn this paper, we have carried out the positron annihilation measurement on high-rate and low-rate a-Si:H thin films deposited by PECVD. By means of the slow positron beam Doppler-broadening technique, the depth profiles of microvoids in a-Si:H have been determined. We have also studied the vacancy-type defect in the surface region in high-rate grown a-Si:H, making comparison between high-rate and low-rate a-Si:H. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature.

scholarly journals Probing diffusion barrier integrity on porous silica low-k thin films using positron annihilation lifetime spectroscopy

2001 ◽  
Vol 89 (9) ◽  
pp. 5138-5144 ◽  
Author(s):  
Jia-Ning Sun ◽  
David W. Gidley ◽  
Terry L. Dull ◽  
William E. Frieze ◽  
Albert F. Yee ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation ◽  
Diffusion Barrier ◽  
Porous Silica ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Barrier Integrity ◽  
Positron Annihilation Lifetime ◽  
Low K

A study of vacancy-related defects in (Pb,La)(Zr,Ti)O/sub 3/ thin films using positron annihilation

2000 ◽  
Vol 47 (4) ◽  
pp. 916-920 ◽  
Author(s):  
T. Friessnegg ◽  
S. Aggarwal ◽  
B. Nielsen ◽  
R. Ramesh ◽  
D.J. Keeble ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Annihilation
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