scholarly journals Randomised testing of a microprocessor model using SMT-solver state generation

2016 ◽  
Vol 118 ◽  
pp. 60-76 ◽  
Author(s):  
Brian Campbell ◽  
Ian Stark
Keyword(s):  
Smt Solver ◽  
State Generation

Engineering Theories with Z3

10.29007/x7b4 ◽  
2018 ◽  
Author(s):  
Nikolaj Bjorner
Keyword(s):  
Satisfiability Modulo Theories ◽  
Smt Solver ◽  
Testing Tools ◽  
Software And Hardware ◽  
Design And Testing

Modern Satisfiability Modulo Theories (SMT)solvers are fundamental to many programanalysis, verification, design and testing tools. They are a goodfit for the domain of software and hardware engineering becausethey support many domains that are commonly used by the tools.The meaning of domains are captured by theories that can beaxiomatized or supported by efficient <i>theory solvers</i>.Nevertheless, not all domains are handled by all solvers andmany domains and theories will never be native to any solver.We here explore different theories that extend MicrosoftResearch's SMT solver Z3's basicsupport. Some can be directly encoded or axiomatized,others make use of user theory plug-ins.Plug-ins are a powerful way for tools to supply their custom domains.

scholarly journals Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

2021 ◽  
pp. 1-8
Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Brecht Truijen ◽  
Philippe Roussel ◽  
Ben Kaczer ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Interface State ◽  
Hot Carrier ◽  
State Generation ◽  
The Impact

Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection

1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2395-L2397 ◽  
Author(s):  
Naoki Yasuda ◽  
Hiroshi Nakamura ◽  
Kenji Taniguchi ◽  
Chihiro Hamaguchi ◽  
Masakazu Kakumu
Keyword(s):  
Electron Injection ◽  
Interface State ◽  
Generation Mechanism ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
State Generation

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

Analysis of the kinetics for interface state generation following hole injection

2003 ◽  
Vol 93 (10) ◽  
pp. 6107-6116 ◽  
Author(s):  
J. F. Zhang ◽  
C. Z. Zhao ◽  
G. Groeseneken ◽  
R. Degraeve
Keyword(s):  
Interface State ◽  
Hole Injection ◽  
State Generation
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