In situ investigation on the oxidation behavior of a RESn3 film by transmission electron microscopy

2011 ◽  
Vol 65 (12) ◽  
pp. 1049-1052 ◽  
Author(s):  
C.F. Li ◽  
Z.Q. Liu ◽  
P.J. Shang ◽  
J.K. Shang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Oxidation Behavior ◽  
Transmission Electron ◽  
In Situ Investigation

In Situ Investigation of the Palladium Silicon Reaction

1984 ◽  
Vol 37 ◽  
Author(s):  
D. A. Smith ◽  
P. A. Psaras ◽  
I. J. Fishert ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Volume Changes ◽  
Cross Sectional ◽  
Compound Formation ◽  
Transmission Electron ◽  
In Situ Investigation ◽  
Hillock Formation ◽  
Elastic Strains

AbstractPalladium has been deposited on {1001 and t1111 oriented silicon wafers and also on polysilicon. Cross-sectional specimens for transmission electron microscopy were prepared and heated in-situ. The interfaces between silicide and silicon were rough and the volume changes accompanying heating and compound formation caused elastic strains in the substrates and in one case hillock formation in the products.

scholarly journals Straining mechanisms in aluminium alloy 6056. In-situ investigation by transmission electron microscopy

2003 ◽  
Vol 340 (1-2) ◽  
pp. 286-291 ◽  
Author(s):  
François Delmas ◽  
Marie Vivas ◽  
Philippe Lours ◽  
Marie-José Casanove ◽  
Alain Couret ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminium Alloy ◽  
Transmission Electron ◽  
In Situ Investigation

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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