5.4-MHz single-crystal silicon wine glass mode disk resonator with quality factor of 2 million

2009 ◽  
Vol 156 (1) ◽  
pp. 28-35 ◽  
Author(s):  
J.E.-Y. Lee ◽  
A.A. Seshia
Keyword(s):  
Single Crystal ◽  
Quality Factor ◽  
Single Crystal Silicon ◽  
Disk Resonator ◽  
Crystal Silicon ◽  
Wine Glass

Mode-Matching of Wineglass Mode Disk Resonator Gyroscope in (100) Single Crystal Silicon

2015 ◽  
Vol 24 (2) ◽  
pp. 343-350 ◽  
Author(s):  
Chae Hyuck Ahn ◽  
Eldwin J. Ng ◽  
Vu A. Hong ◽  
Yushi Yang ◽  
Brian J. Lee ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Mode Matching ◽  
Disk Resonator ◽  
Crystal Silicon

Quality factor optimization of composite piezoelectric single-crystal silicon MEMS resonators

2015 ◽  
Author(s):  
Ossama Mortada ◽  
Pierre Blondy ◽  
Jean-Christophe Orlianges ◽  
Matthieu Chatras ◽  
Aurelian Crunteanu
Keyword(s):  
Single Crystal ◽  
Quality Factor ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Mems Resonators

Highly decoupled single-crystal silicon resonators: an approach for the intrinsic quality factor

2006 ◽  
Vol 16 (6) ◽  
pp. S45-S53 ◽  
Author(s):  
Baptiste Le Foulgoc ◽  
Tarik Bourouina ◽  
Olivier Le Traon ◽  
Alain Bosseboeuf ◽  
Frédéric Marty ◽  
...  
Keyword(s):  
Single Crystal ◽  
Quality Factor ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Intrinsic Quality ◽  
Silicon Resonators

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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