Preparation of porous InAlGaN/Si(111) by photoelectrochemical etching for high performance hydrogen gas sensors at room temperature
2015 ◽
Vol 213
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pp. 276-284
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pp. 1317-1324
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2010 ◽
Vol 35
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pp. 12568-12573
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2015 ◽
Vol 7
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2019 ◽
Vol 802
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pp. 244-251
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