Direct growth of 3D porous (Ni-Co)3S4 nanosheets arrays on rGO-PEDOT hybrid film for high performance non-enzymatic glucose sensing

Polymer grafting from graphitic carbon materials has been explored for several decades. Currently existing methods mostly employ harsh chemical treatment to generate defect site in graphitic carbon plane, which are used as active site for polymerization of precursors. Unfortunately, the treatment cause serious degradation of chemical structure and material properties. Here, we present a straightforward route for growth of polyaniline chain from nitrogen (N)-sites of carbon nanotubes. N site in the CNT wall initiates the polymerization of aniline monomer, which generates seamless hybrids composed of polyaniline directly grafted onto the CNT walls. The synthesized hybrids show excellent synergistic electrochemical performance, and are employed for electrodes of pseudo-capacitor. This approach offers an efficient way to obtain hybrid system consisting of conducting polymers directly grafted from graphitic dopant sites.

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Direct growth of nickel terephthalate on Ni foam with large mass-loading for high-performance supercapacitors

Journal of Materials Chemistry A ◽

10.1039/c7ta05373h ◽

2017 ◽

Vol 5 (36) ◽

pp. 19323-19332 ◽

Cited By ~ 27

Author(s):

Qiulin Chen ◽

Shuijin Lei ◽

Peiqin Deng ◽

Xiuling Ou ◽

Lianfu Chen ◽

...

Keyword(s):

Electrochemical Performance ◽

High Performance ◽

Large Mass ◽

High Mass ◽

Mass Loading ◽

Ni Foam ◽

Direct Growth

Nickel terephthalate is grown on Ni foam with high mass-loading and its electrochemical performance can be greatly enhanced by polyaniline electrodeposition.

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Hybridization of Co3O4 and α-MnO2 Nanostructures for High-Performance Nonenzymatic Glucose Sensing

ACS Sustainable Chemistry & Engineering ◽

10.1021/acssuschemeng.8b02835 ◽

2018 ◽

Vol 6 (10) ◽

pp. 13248-13261 ◽

Cited By ~ 23

Author(s):

Lichchhavi Sinha ◽

Srimanta Pakhira ◽

Prateek Bhojane ◽

Sawanta Mali ◽

Chang Kook Hong ◽

...

Keyword(s):

High Performance ◽

Glucose Sensing

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Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes

Advanced Materials Interfaces ◽

10.1002/admi.201800662 ◽

2018 ◽

Vol 5 (18) ◽

pp. 1800662 ◽

Cited By ~ 8

Author(s):

Qiucheng Li ◽

Qingqing Wu ◽

Jing Gao ◽

Tongbo Wei ◽

Jingyu Sun ◽

...

Keyword(s):

Boron Nitride ◽

Ultraviolet Light ◽

High Performance ◽

Light Emitting Diodes ◽

Hexagonal Boron Nitride ◽

Light Emitting ◽

Direct Growth ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Rapid and direct growth of bipyramid TiO2 from Ti3C2Tx MXene to prepare Ni/TiO2/C heterogeneous composites for high-performance microwave absorption

Chemical Engineering Journal ◽

10.1016/j.cej.2019.123095 ◽

2020 ◽

Vol 383 ◽

pp. 123095 ◽

Cited By ~ 12

Author(s):

Congli Zhou ◽

Xiaoxia Wang ◽

Heng Luo ◽

Lianwen Deng ◽

Shuang Wei ◽

...

Keyword(s):

Microwave Absorption ◽

High Performance ◽

Direct Growth

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Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.1915786117 ◽

2019 ◽

Vol 117 (2) ◽

pp. 902-906 ◽

Cited By ~ 4

Author(s):

Mark Hettick ◽

Hao Li ◽

Der-Hsien Lien ◽

Matthew Yeh ◽

Tzu-Yi Yang ◽

...

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Indium Tin Oxide ◽

High Performance ◽

High Growth ◽

Oxide Semiconductor ◽

High Electron ◽

Lattice Match ◽

Direct Growth ◽

Shape Controlled

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

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