scholarly journals Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

2019 ◽  
Vol 117 (2) ◽  
pp. 902-906 ◽  
Author(s):  
Mark Hettick ◽  
Hao Li ◽  
Der-Hsien Lien ◽  
Matthew Yeh ◽  
Tzu-Yi Yang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Indium Tin Oxide ◽  
High Performance ◽  
High Growth ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Lattice Match ◽  
Direct Growth ◽  
Shape Controlled

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

scholarly journals Extremely high-gain source-gated transistors

2019 ◽  
Vol 116 (11) ◽  
pp. 4843-4848 ◽  
Author(s):  
Jiawei Zhang ◽  
Joshua Wilson ◽  
Gregory Auton ◽  
Yiming Wang ◽  
Mingsheng Xu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Critical Factor ◽  
High Gain ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Short Channel ◽  
Channel Effects ◽  
Channel Lengths

Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor. Using an oxide semiconductor, an intrinsic gain of 29,000 was obtained, which is orders of magnitude higher than a conventional Si transistor. These same devices demonstrate almost total immunity to negative bias illumination temperature stress, the foremost bottleneck to using oxide semiconductors in major applications, such as display drivers. Furthermore, devices fabricated with channel lengths down to 360 nm display no obvious short-channel effects, another critical factor for high-density integrated circuits and display applications. Finally, although the channel material of conventional transistors must be a semiconductor, by demonstrating a high-performance transistor with a semimetal-like indium tin oxide channel, the range and versatility of materials have been significantly broadened.

SINGLE CRYSTAL GROWTH AND TEXTURING OF LEAD-BASED PIEZOELECTRIC CERAMICS VIA TEMPLATED GRAIN GROWTH PROCESS

2008 ◽  
Vol 01 (02) ◽  
pp. 127-132 ◽  
Author(s):  
THOMAS RICHTER ◽  
CARSTEN SCHUH ◽  
RALF MOOS ◽  
ENDER SUVACI
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Grain Growth ◽  
High Performance ◽  
Piezoelectric Materials ◽  
Secondary Recrystallization ◽  
Single Crystal Growth ◽  
Templated Grain Growth ◽  
Textured Ceramics

In the field of high-performance piezoelectric materials, PMN-PT single crystals and textured ceramics have been attracting increased research interest for several years. On the other hand, the growth of single crystals from melt for PZT-based compositions is impossible due to its incongruent melting behavior. In order to obtain the characteristics of pure single crystal PZT as closely as possible, the PZT must be textured by secondary recrystallization of introduced seeds in a fine-grained matrix. Zirconium was therefore added to a PMN-PT-ceramic with 32 mol% PT ( Pb ( Mg 1/3 Nb 2/3)0.68 Ti 0.32 O 3) in order to obtain a PMN-PZT-ceramic with 37 mol% PT and 21 mol% PZ ( Pb ( Mg 1/3 Nb 2/3)0.42( Ti 0.638 Zr 0.362)0.58 O 3). Initially, the growth mechanism of (001)-oriented BaTiO 3 (BT) single crystals in those matrices was investigated. The piezoelectric single crystals were produced via a process that starts with the hot pressing of a BT single crystal in cold isostatically pressed ceramics, followed by an additional sintering step in order to achieve a secondary recrystallization. The measured growth lengths in PMN-PT and PMN-PZT matrices were up to 140 μm and 65 μm, respectively. Having developed this understanding, both ceramics were textured via the templated grain growth (TGG) process by using (001)-oriented BT templates. Sintering of templated grain bodies resulted in template growth into the matrix to produce textured ceramics with Lotgering factors up to 0.99 for both compositions. In textured samples unipolar strain s33 was enhanced by a factor of up to 1.8 compared to randomly oriented ceramics. By contrast, BT single crystal growth in an alternative PZT matrix with NdMn doping was not successful. Hence, in the present work, growth experiments in this NdMn -doped PZT were first performed using PZT fibers of similar composition as seeds. Growth of the fiber diameter of up to 100 μm was observed in that matrix.

Single-crystal SnO2nanoshuttles: shape-controlled synthesis, perfect flexibility and high-performance field emission

2011 ◽  
Vol 22 (50) ◽  
pp. 505601 ◽  
Author(s):  
Junjie Li ◽  
Meimei Chen ◽  
Shibing Tian ◽  
Aizi Jin ◽  
Xiaoxiang Xia ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Emission ◽  
High Performance ◽  
Controlled Synthesis ◽  
Shape Controlled

Investigation of crystal growth on (111) InSb thin films to produce high performance Hall elements

1999 ◽  
Vol 14 (1) ◽  
pp. 39-43 ◽  
Author(s):  
Toshiaki Fukunaka ◽  
Takek Matsui ◽  
Shin-ya Matsuno
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
High Performance ◽  
Flux Ratio ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray ◽  
Insb Thin Films ◽  
Electromagnetic Characteristics ◽  
Hall Elements

The crystal growth of InSb thin films on mica substrates was investigated by conventional three temperature vacuum evaporation with varied Sb/In flux ratios and temperature programming for the substrate. The Sb/In flux ratio was varied from higher than 1.0 (about 2.0 is optimum), to less than 1.0 (about 0.7 is optimum), to again much higher than 1.0 during the stages of evaporation. The electromagnetic characteristics were investigated and x-ray analysis of the films at various stages was undertaken. The films obtained contained no excess In and they were (111) highly oriented in x-ray analysis, showing high electron mobility. These films were used to prepare high performance Hall elements.

Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor

2014 ◽  
Vol 11 (3-4) ◽  
pp. 844-847 ◽  
Author(s):  
Raphael Brown ◽  
Abdullah Al-Khalidi ◽  
Douglas Macfarlane ◽  
Sanna Taking ◽  
Gary Ternent ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

scholarly journals Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Kun Liang ◽  
Dingwei Li ◽  
Huihui Ren ◽  
Momo Zhao ◽  
Hong Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Supply Voltage ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Electrical Stability ◽  
Coffee Ring ◽  
Coffee Ring Effect ◽  
Ring Effect

AbstractMetal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the “coffee-ring” effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect. ITO has high electrical conductivity and is generally used as an electrode material. However, by reducing the film thickness down to nanometers scale, the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in transistors. The ultrathin (~10-nm-thick) ITO film in the center of the coffee-ring worked as semiconducting channels, while the thick ITO ridges (>18-nm-thick) served as the contact electrodes. The fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V−1 s−1 and a low subthreshold swing of 105 mV dec−1. In addition, the devices exhibited excellent electrical stability under positive bias illumination stress (PBIS, ΔVth = 0.31 V) and negative bias illuminaiton stress (NBIS, ΔVth = −0.29 V) after 10,000 s voltage bias tests. More remarkably, fully printed n-type metal–oxide–semiconductor (NMOS) inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V, promising for advanced electronics applications.

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