Preparation of highly transparent conductive aluminum-doped zinc oxide thin films using a low-temperature aqueous solution process for thin-film solar cells applications

2019 ◽  
Vol 203 ◽  
pp. 110161 ◽  
Author(s):  
Rongyue Liu ◽  
Ying Chen ◽  
Shuyu Ding ◽  
Yuanbo Li ◽  
Yong Tian
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Low Temperature ◽  
Solution Process ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide

Thermal Stability of Aluminum Doped Zinc Oxide Thin Films

2011 ◽  
Vol 685 ◽  
pp. 147-151 ◽  
Author(s):  
Jin Hua Huang ◽  
Rui Qin Tan ◽  
Jia Li ◽  
Yu Long Zhang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Electrode Materials ◽  
Thin Film Solar Cells ◽  
Oxide Thin Films ◽  
Aluminum Doped Zinc Oxide ◽  
Thermal Stability Of

Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

Characteristics of Aluminum-Doped Zinc Oxide Films Grown Using Facing Target Sputtering for Transparent Electrode of Heterojunction Solar Cells

2021 ◽  
Vol 21 (3) ◽  
pp. 1799-1803
Author(s):  
Yujin Kim ◽  
Sangmo Kim ◽  
Jeongsoo Hong ◽  
Kyung Hwan Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Transparent Electrode ◽  
High Energy ◽  
Heterojunction Solar Cells ◽  
Aluminum Doped Zinc Oxide ◽  
Facing Target Sputtering ◽  
High Energy Particles

In general sputtering, material characteristics can be degraded by high-energy particles located inside the plasma owing to the thin film surface. However, facing target sputtering (FTS) can be used to produce high-quality thin films through maximum control over substrate damage and the reduction of layer damage caused by high-energy particles impacting the substrate. Transparent conductive oxides (TCOs) are being applied to a variety of technologies, including displays and solar cells. The typical transparent electrode material is indium tin oxide (ITO), which contains rare and expensive raw materials. Aluminum-doped zinc oxide (AZO) has attracted increasing attention as a substitute to ITO because it is composed of abundantly available resources and is generally inexpensive. In this study, an AZO thin film was prepared using an FTS system for heterojunction solar cells. The effects of the deposition substrate temperature on the resulting electrical conductivity, structural properties, and optical properties of the AZO thin films were examined.

The Influence of CuCl Treatment on the PL Spectra of CdTe Thin Film, Component of CdS/CdTe Heterojunctions

2009 ◽  
Vol 1165 ◽  
Author(s):  
Sergiu A Vatavu ◽  
Hehong Zhao ◽  
Iuliana M Caraman ◽  
Petru A Gasin ◽  
Don L Morel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Comparative Analysis ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Deposition Parameters ◽  
Cdte Thin Films ◽  
Low Temperature Photoluminescence

AbstractTechnology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out by using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of CuCl influence, as-deposited, annealed heterojunctions, with CuCl treatment of CdS have been investigated.

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