Measurement of poly-Si film thickness on textured surfaces by X-ray diffraction in poly-Si/SiO passivating contacts for monocrystalline Si solar cells

2022 ◽  
Vol 236 ◽  
pp. 111510
Author(s):  
Kejun Chen ◽  
Alexandra Bothwell ◽  
Harvey Guthrey ◽  
Matthew B. Hartenstein ◽  
Jana-Isabelle Polzin ◽  
...  
2001 ◽  
Vol 664 ◽  
Author(s):  
M. Luysberg ◽  
C. Scholten ◽  
L. Houben ◽  
R. Carius ◽  
F. Finger ◽  
...  

ABSTRACTThe structural properties of nip-µc-Si:H solar cells are investigated by transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Different structural compositions are obtained by variation of the gas mixture during preparation by plasma enhanced chemical vapour deposition. Nucleation and growth of the n-layer onto textured TCO substrate was found to be similar to the growth on glass substrates. The growth of the i-layer follows a local epitaxy. This implies that the structure of the n-layer is of special importance regarding the control of the microstructure in microcrystalline Si nip solar cells.


Author(s):  
Imteyaz Ahmad ◽  
Jeremy D Fields ◽  
Vanessa L Pool ◽  
Jiafan Yu ◽  
Douglas Van Campen ◽  
...  

2019 ◽  

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Omid Malekan ◽  
Mehdi Adelifard ◽  
Mohamad Mehdi Bagheri Mohagheghi

Purpose In the past several years, CH3NH3PbI3 perovskite material has been extensively evaluated as an absorber layer of perovskite solar cells due to its excellent structural and optical properties, and greater than 22% conversion efficiency. However, improvement and future commercialization of solar cells based on CH3NH3PbI3 encountered restrictions due to toxicity and instability of the lead element. Recently, studies on properties of lead-free and mixture of lead with other cations perovskite thin films as light absorber materials have been reported. The purpose of this paper was the fabrication of CH3NH3Sn1-xPbxI3 thin films with different SnI2 concentrations in ambient condition, and study on the structural, morphological, optical, and photovoltaic performance of the studied solar cells. The X-ray diffraction studies revealed the formation of both CH3NH3PbI3 and CH3NH3SnI3 phases with increasing the Sn concentration, and improvement in crystallinity and morphology was also observed. All perovskite layers had a relatively high absorption coefficient >104 cm−1 in the visible wavelengths, and the bandgap values varied in the range from 1.46 to 1.63 eV. Perovskite solar cells based on these thin films have been fabricated, and device performance was investigated. Results showed that photo-conversion efficiency (PCE) for the pure CH3NH3PbI3sample was 1.20%. With adding SnI2, PCE was increased to 4.48%. Design/methodology/approach In this work, the author mixed tin and lead with different percentages in the perovskite thin film. Also, the preparation of these layers and also other layers to fabricate solar cells based on them were conducted in an open and non-glove box environment. Finally, the effect of [Sn/Pb] ratio in the CH3NH3Sn1-xPbxI3 layers on the structural, morphological, optical, electrical and photovoltaic performance have been investigated. Findings CH3NH3Sn1-xPbxI3 (x = 0.0, 0.25, 0.50, 0.75, 1.0) perovskite thin films have been grown by a spin-coating technique. It was found that as tin concentration increases, the X-ray diffraction and FESEM images studies revealed the formation of both CH3NH3PbI3 and CH3NH3SnI3 phases, and improvement in crystallinity, and morphology; all thin films had high absorption coefficient values close to 104 cm−1 in the visible region, and the direct optical bandgap in the layers decreases from 1.63 eV in pure CH3NH3SnI3 to 1.46 eV for CH3NH3Sn0.0.25Pb0.75I3 samples; all thin films had p-type conductivity, and mobility and carrier density increased; perovskite solar cells based on these thin films have been fabricated, and device performance was investigated. Results showed that photo-conversion efficiency (PCE) for the pure CH3NH3PbI3sample was 1.20%. With adding SnI2, PCE was increased to 4.48%. Originality/value The preparation method seems to be interesting as it is in an ambient environment without the protection of nitrogen or argon gas.


Author(s):  
Thierry Pauporté ◽  
Daming zheng

Nowadays, overcoming the stability issue of perovskite solar cells (PSCs) while keeping high efficiency has become an urgent need for the future of this technology. By using x-ray diffraction (XRD),...


2015 ◽  
Vol 1131 ◽  
pp. 215-220
Author(s):  
Emmanuel Nyambod Timah ◽  
Buagun Samran ◽  
Udom Tipparach

TiO2nanotubes were successfully synthesized by anodization method of Ti foils. The electrolyte was composed of ethylene glycol (EG), ammonium fluoride (0.3%wt NH4F) and de-ionized water (2% vol H2O). A constant DC power supply of 50 V was used during anodization with anodizing times of 1 hour, 2 hours, 4 hours and 6 hours. The samples were annealed at 450 °C for 2 hours. The TiO2nanotubes were studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Structural analysis revealed the presence of pure Ti, and the crystalline anatase phase due to transformation of amorphous TiO2after annealing. The morphology of TiO2nanotube sizes showed an increase in tube diameter with anodizing time from approximately 50 nm to 200 nm. However, the efficiency of dye-sensitized solar cells increased with anodizing times up to a maximum of 5.74 % for anodizing time of 4 hours.


2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Hsiao-Yeh Chu ◽  
Min-Hang Weng ◽  
Chen Lin

The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process.


1997 ◽  
Vol 49 (1-4) ◽  
pp. 143-148 ◽  
Author(s):  
Yoshihiro Hishikawa ◽  
Eiji Maruyama ◽  
Shigeo Yata ◽  
Makoto Tanaka ◽  
Seiichi Kiyama ◽  
...  

2012 ◽  
Vol 510-511 ◽  
pp. 156-162 ◽  
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.


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