Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors

2015 ◽  
Vol 85 ◽  
pp. 43-49 ◽  
Author(s):  
Ming Yang ◽  
Zhaojun Lin ◽  
Jingtao Zhao ◽  
Yutang Wang ◽  
Zhiyuan Li ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Substrate Thickness ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate

2006 ◽  
Vol 45 (7) ◽  
pp. 5728-5731 ◽  
Author(s):  
Yang Liu ◽  
Takashi Egawa ◽  
Hao Jiang ◽  
Baijun Zhang ◽  
Hiroyasu Ishikawa
Keyword(s):  
Sapphire Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

2000 ◽  
Vol 77 (2) ◽  
pp. 250-252 ◽  
Author(s):  
J. P. Ibbetson ◽  
P. T. Fini ◽  
K. D. Ness ◽  
S. P. DenBaars ◽  
J. S. Speck ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface States ◽  
Polarization Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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