Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

2015 ◽  
Vol 85 ◽  
pp. 925-930 ◽  
Author(s):  
H. Saidi ◽  
T. Hidouri ◽  
I. Fraj ◽  
F. Saidi ◽  
A. Bouazizi
Keyword(s):  
Optical Properties ◽  
Chemical Etching ◽  
Organic Photovoltaic ◽  
Etching Time ◽  
Photovoltaic Applications ◽  
Metal Assisted Chemical Etching

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching

2020 ◽  
Vol 92 (3) ◽  
pp. 30402
Author(s):  
Shiying Zhang ◽  
Zhenhua Li ◽  
Qingjun Xu
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Optimal Solution ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Selected Area Electron Diffraction ◽  
Initial Silicon ◽  
Metal Assisted Chemical Etching

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

Growth, Structure and Optical Properties of Silicon Nanowires Formed by Metal-Assisted Chemical Etching

2012 ◽  
Vol 7 (6) ◽  
pp. 602-606 ◽  
Author(s):  
K. A. Gonchar ◽  
L. A. Osminkina ◽  
R. A. Galkin ◽  
M. B. Gongalsky ◽  
V. S. Marshov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Growth Structure ◽  
Metal Assisted Chemical Etching

scholarly journals Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

AIP Advances ◽  
2016 ◽  
Vol 6 (2) ◽  
pp. 025324 ◽  
Author(s):  
R. W. Wu ◽  
G. D. Yuan ◽  
K. C. Wang ◽  
T. B. Wei ◽  
Z. Q. Liu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Photovoltaic Applications ◽  
Silicon Microwire ◽  
Metal Assisted Chemical Etching

Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon

2005 ◽  
Vol 480-481 ◽  
pp. 139-144 ◽  
Author(s):  
T. Hadjersi ◽  
N. Gabouze ◽  
A. Ababou ◽  
M. Boumaour ◽  
W. Chergui ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Multicrystalline Silicon ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
External Bias ◽  
Etching Method ◽  
Metal Assisted Chemical Etching

A new metal-assisted chemical etching method using Na2S2O8 as an oxidant is proposed to form a porous layer on a multicrystalline silicon (mc-Si). This method does not need an external bias and enables formation of uniform porous silicon layers, more rapidly than the conventional stain etching method. A thin layer of Pd is deposited on the mc-Si surface prior to immersion in a solution of HF and Na2S2O8. The characterisations of etched layer formed by this method as a function of etching time were investigated by scanning electron microscopy, X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) and reflectance spectroscopy. It shows that the surface is porous and the etching is independent of grain orientation. In addition, reflectance measurements made with a variety of etching conditions show a lowering of the reflectance from 25 % to 6 % measured with respect to the bare as-cut substrate. However, this result can be improved by changing the experimental conditions (concentration, time, temperature, …).

Investigation of Effect of Chemical Etching and Temperature on Optical Properties of Porous Silicon Layer

2011 ◽  
Vol 311-313 ◽  
pp. 1773-1778
Author(s):  
Yong Fu Long ◽  
Chun Mei Yao ◽  
Li Yun Lei ◽  
Wei Wen Hu ◽  
Bin Fang Cao ◽  
...  
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Porous Silicon ◽  
Optical Thickness ◽  
Chemical Etching ◽  
Etching Rate ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Photoluminescence Spectra

The paper investigated the effect of chemical etching and temperature on the optical properties and microstructures of porous silicon layer fabricated by the pulse electrochemically etching by means of the reflectance spectroscopy and photoluminescence spectroscopy. The relationship between the optical thickness (nd) and refractive index n of porous silicon layer and the chemical etching time and temperature has been detailedly studied. With increasing the chemical etching times, the reflectance spectra exhibit the more intense interference oscillations, which mean the uniformity and interface smoothness of porous silicon layers become better, meanwhile, results in decreasing the optical thickness and refractive index, indicating a higher porosity. Moreover, the intensity of photoluminescence spectra increases, and the envelope curves of photoluminescence spectra exhibit a trend of red-shift, which implied the average diameter of silicon nanocrystallite became larger. The chemical etching rate of the optical thickness intensely increases with the chemical etching temperature.

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