High temperature electrical transport study of Si-doped AlN

2016 ◽  
Vol 98 ◽  
pp. 253-258 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Jaweb Ben Messaoud ◽  
Hervé Peyre ◽  
Mohamed Al Khalfioui ◽  
...  
2010 ◽  
Vol 18 (9) ◽  
pp. 1772-1778 ◽  
Author(s):  
Arabinda Haldar ◽  
K.G. Suresh ◽  
A.K. Nigam
Keyword(s):  

2012 ◽  
Vol 510-511 ◽  
pp. 194-200 ◽  
Author(s):  
Shahid Ameer ◽  
Asghari Maqsood

The compound Dy2Si2O7exists in two polymorphs, the low temperature triclinic phase (type B) and a high temperature orthorhombic phase (type E).The dc and ac electrical conductivities of E-Dy2Si2O7are measured in the temperature range 290-510 K and frequency range 1 kHz to 1 MHz . The dc electrical transport data are analyzed according to Motts variable-range hopping model. The disorder parameter (To) and density of states at fermi level are obtained. The ac conductivity σac(ω) is obtained through the dielectric parameters. The ac conductivity can be expressed as σac(ω) =B ωs, where s is slope and it decreases with increase in temperature. The conduction mechanism in the compound is discussed in low and high temperature regions in the light of theoretical models.


2011 ◽  
Vol 197-198 ◽  
pp. 499-502
Author(s):  
Zheng He Hua ◽  
Heng Zhang ◽  
Ju Peng

Superconducting SmFeAsO0.8F0.2 compound was successfully synthesized by high pressure high temperature treatment with pressure of 6 G Pa at 1400 °C for 2 hours. The X-ray diffraction pattern of the sample indicates the formation of the tetragonal ZrCuSiAs-type SmFeAsO0.8F0.2 with lattice parameters a=3.932 Å and c=8.490 Å. The electrical transport study shows that the sample has a rather high transition temperature Tc of about 52 K, and magnetic field effect on the resistance reveals a rather high upper critical field HC2 of about 65 T.


2018 ◽  
Vol 435 ◽  
pp. 963-973 ◽  
Author(s):  
Teng Fei Zhang ◽  
Zhi Xin Wan ◽  
Ji Cheng Ding ◽  
Shihong Zhang ◽  
Qi Min Wang ◽  
...  

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