scholarly journals Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy

2012 ◽  
Vol 152 (9) ◽  
pp. 747-751 ◽  
Author(s):  
M.L. Teague ◽  
H. Chu ◽  
F.-X. Xiu ◽  
L. He ◽  
K.-L. Wang ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Fermi Energy ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Energy Dependent

Simultaneous observation of surface- and edge-states of a 2D topological insulator through scanning tunneling spectroscopy and differential conductance imaging

2017 ◽  
Vol 19 (15) ◽  
pp. 9872-9878 ◽  
Author(s):  
Hrishikesh Bhunia ◽  
Abhijit Bar ◽  
Abhijit Bera ◽  
Amlan J. Pal
Keyword(s):  
Topological Insulator ◽  
Fermi Energy ◽  
Topological Insulators ◽  
Dirac Point ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Differential Conductance ◽  
Scanning Tunneling ◽  
Edge States ◽  
Simultaneous Observation

Gapless edge-states with a Dirac point below the Fermi energy and band-edges at the interior observed in 2D topological insulators.

Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy

2016 ◽  
Vol 4 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Hrishikesh Bhunia ◽  
Biswajit Kundu ◽  
Soumyo Chatterjee ◽  
Amlan J. Pal
Keyword(s):  
Thin Films ◽  
Fermi Energy ◽  
Film Formation ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Heterovalent Substitution ◽  
Silar Method ◽  
Free Carriers ◽  
Element Substitution

Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.

Nonlayered tellurene as an elemental 2D topological insulator: experimental evidence from scanning tunneling spectroscopy

Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3591-3598 ◽  
Author(s):  
Salma Khatun ◽  
Arnab Banerjee ◽  
Amlan J. Pal
Keyword(s):  
Experimental Evidence ◽  
Topological Insulator ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling

In alpha-tellurene, elemental topological insulator behavior along with an extended metallic edge opening monotonically into gapped states has been evidenced.

Scanning-tunneling spectroscopy on conjugated polymer films

2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
S.F. Alvarado ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
H.W.M. Salemink ◽  
...  
Keyword(s):  
Polymer Films ◽  
Conjugated Polymer ◽  
Three Dimensional ◽  
Field Enhancement ◽  
Direct Consequence ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Band Alignment ◽  
Scanning Tunneling ◽  
Order Of Magnitude

AbstractScanning-tunneling spectroscopy experiments have been performed on conjugated polymer films and have been compared to a three-dimensional numerical model for charge injection and transport. It is found that field enhancement near the tip apex leads to significant changes in the injected current, which can amount to more than an order of magnitude, and can even change the polarity of the dominant charge carrier. As a direct consequence, the single-particle band gap and band alignment of the organic material can be directly obtained from tip height-voltage (z-V) curves, provided that the tip has a sufficiently sharp apex.

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