Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy

2016 ◽  
Vol 4 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Hrishikesh Bhunia ◽  
Biswajit Kundu ◽  
Soumyo Chatterjee ◽  
Amlan J. Pal

Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.

2017 ◽  
Vol 19 (15) ◽  
pp. 9872-9878 ◽  
Author(s):  
Hrishikesh Bhunia ◽  
Abhijit Bar ◽  
Abhijit Bera ◽  
Amlan J. Pal

Gapless edge-states with a Dirac point below the Fermi energy and band-edges at the interior observed in 2D topological insulators.


2003 ◽  
Vol 104 (3-4) ◽  
pp. 357-363
Author(s):  
G. Neunert ◽  
M. Kamiński ◽  
B. Susła ◽  
T. Dunaj ◽  
E. Chimczak ◽  
...  

2007 ◽  
Vol 460-462 ◽  
pp. 574-575
Author(s):  
Roberto Di Capua ◽  
Marco Salluzzo ◽  
Ruggero Vaglio ◽  
Carlo Ferdeghini ◽  
Valeria Ferrando ◽  
...  

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