Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy
2016 ◽
Vol 4
(3)
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pp. 551-558
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Keyword(s):
Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.
1999 ◽
Vol 147
(1-4)
◽
pp. 140-145
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1989 ◽
Vol 162-164
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pp. 1129-1130
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Keyword(s):
2011 ◽
Vol 95
(6)
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pp. 1537-1543
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2017 ◽
Vol 19
(15)
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pp. 9872-9878
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2002 ◽
Vol 522
(1)
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pp. 21-25
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2012 ◽
Vol 152
(9)
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pp. 747-751
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2000 ◽
Vol 18
(4)
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pp. 1077-1082
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Keyword(s):